Composition dependent structural modification in relaxed Si_(1-x)Ge_x films by 100 MeV Au beam

A. Kanjilal; D. Kanjilal

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Composition dependent structural modification in relaxed Si_(1-x)Ge_x films by 100 MeV Au beam

机译：100 MeV Au束在弛豫Si_（1-x）Ge_x薄膜中的成分依赖性结构修饰

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摘要

We report the modification of molecular beam epitaxy grown strain-relaxed single crystalline Si_(1-x)Ge_x layers for x=0.5 and 0.7 as a result of irradiation with 100 MeV Au ions at 80 K. The samples were structurally characterized by Rutherford backscattering spectrometry/channeling, transmission electron microscopy (TEM) and high-resolution X-ray diffraction before and after irradiation with fluences of 5 X 10~(10), 1 X 10~(11) and 1 X 10~(12) ions/cm~2, respectively. No track formation was detected in both the samples from TEM studies and finally, the crystalline to amorphous phase transformation at 1 X 10~(12) ions/cm~2 was examined to be higher for Si_(0.3)Ge_(0.7) layers compared to Si_(0.5)Ge_(0.5) layers.

机译：我们报告了分子束外延生长的应变松弛单晶Si_（1-x）Ge_x层的改性，其x = 0.5和0.7是由于在80 K下用100 MeV Au离子辐照的结果。样品的结构由卢瑟福背散射表征辐射前后的光谱/通道，透射电子显微镜（TEM）和高分辨率X射线衍射，能量通量分别为5 X 10〜（10），1 X 10〜（11）和1 X 10〜（12）离子/ cm〜2在TEM研究的两个样品中均未检测到痕迹形成，最后，与Si_（0.3）Ge_（0.7）层相比，以1 X 10〜（12）离子/ cm〜2的晶态向非晶态相变更高到Si_（0.5）Ge_（0.5）层。

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来源
《Solid State Communications》 |2006年第7期|p.371-375|共5页
作者
A. Kanjilal; D. Kanjilal;
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作者单位

Lotus Laboratory, Department of Physics, University of Rome 'La Sapienza', Piazzale Aldo Moro 2, I-00185 Roma RM, Italy;

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正文语种 eng
中图分类固体物理学;
关键词
A. SiGe; C. Structure; C. Transmission electron microscopy; C. X-ray diffraction; D. Irradiation;

机译：硅锗;C.结构;C.透射电子显微镜;C． X射线衍射;D。辐照;

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1. Composition And Strain Contrast Of Si_(1-x)ge_x (x=0.20) And Si_(1-y)c_y (y≤0.015) Epitaxial Strained Films On (100) Si In Annular Dark Field Images [J] . X. Wu, J.-M. Baribeau Journal of Applied Physics . 2009,第4期

机译：环形暗场图像中（100）Si上Si_（1-x）ge_x（x = 0.20）和Si_（1-y）c_y（y≤0.015）外延应变膜的组成和应变对比度
2. Gas Source Molecular Beam Epitaxy Epitaxy Grown Strained-Si Films on Step-Graded Relaxed Si_(1-x)Ge_x for MOS applications [J] . BERA L.K., RAY S.K., NAYAK D.K., Journal of Electronic Materials . 1999,第2期

机译：用于MOS应用的阶梯梯度弛豫Si_（1-x）Ge_x上的气源分子束外延外延生长应变硅膜
3. Thermal transport in molecular beam epitaxy grown Si_(1-x)Ge_x alloy films with a full spectrum of composition (x = 0-1) [J] . Wang Yu-Sheng, Liu Zheng-Chang, Ye Jia-Jia, Journal of Applied Physics . 2019,第21期

机译：分子束外延生长的Si_（1-x）Ge_x合金膜具有完整光谱范围（x = 0-1）的热传输
4. Analysis of Compositionally and Structurally Graded Si:H and Si_(1-x)Ge_x:H Thin Films by Real Time Spectroscopic Ellipsometry [C] . Nikolas J. Podraza, Jing Li, Christopher R. Wronski, MRS spring meeting symposium . 2008

机译：成分和结构梯度的Si：H和Si_（1-x）Ge_x：H薄膜的实时光谱椭偏分析
5. Multifragmentation in (84)Kr + (197)Au collisions at beam energies of E/A = 35, 55, 70, 100, 200, and 400 MeV. [D] . Williams, Cornelius Fitzgerald. 1996

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6. Microstructural and plasmonic modifications in Ag–TiO2 and Au–TiO2 nanocomposites through ion beam irradiation [O] . Venkata Sai Kiran Chakravadhanula, Yogendra Kumar Mishra, Venkata Girish Kotnur, 2014

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7. Observation of a (2X8) surface reconstruction on Si_(1-x)Ge_x alloys grown on (100) Si by molecular beam epitaxy [O] . Croke E. T., Hauenstein R. J., Fu T. C., 1991

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8. Photoresponse Model for Si_(1-x)Ge_x/Si Heterojunction Internal Photoemission Infrared Detector [R] . Lin, T., Park, J. S., Gunapala, S. D., 1993

机译：si_（1-x）Ge_x / si异质结内部光电发射红外探测器的光响应模型

Composition dependent structural modification in relaxed Si_(1-x)Ge_x films by 100 MeV Au beam

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