Solid state ion trap: Lateral confinement of quantum well excitons by oscillating piezoelectric field

Na YCN; Yamamoto Y

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Solid state ion trap: Lateral confinement of quantum well excitons by oscillating piezoelectric field

机译：固态离子阱：通过振荡压电场横向限制量子阱激子

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摘要

We theoretically investigate a new type of lateral trap that can be used to confine quantum well excitons. By sending an ultrahigh frequency bulk acoustic wave from the substrate of III-V semiconductors such as GaAs or GaN, an oscillating piezoelectric field is generated. The effective potential induced by the oscillating piezoelectric field implements a type I lateral trap. Such a controllable quantum confinement is essential in many semiconductor nano-electronics and nano-photonics applications. (c) 2006 Elsevier Ltd. All rights reserved.

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《Solid State Communications》 |2006年第1期|p. 28-32|共5页
作者
Na YCN; Yamamoto Y;
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作者单位

Stanford Univ, Dept Elect Engn, EL Ginzton Lab, Stanford, CA 94305 USA;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
semiconductor; quantum wells; piezoelectricity; quantum localization; SURFACE ACOUSTIC-WAVES; GAAS; CONDENSATION; TRANSPORT; PARTICLE; DOTS;

机译：半导体;量子阱;压电;量子定位;表面声波;GAAS;冷凝;运输;粒子;点;

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3. Strong graded interface related piezoelectric polarization weakening effects on exciton confinement in single InxGa1-xN/GaN quantum wells [J] . Caetano EWS., Freire VN., Farias GA., Physica, E. Low-dimensional systems & nanostructures . 2002,第2a4期

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Solid state ion trap: Lateral confinement of quantum well excitons by oscillating piezoelectric field

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