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Magnetic and electronic transport properties of Mn-doped silicon

机译：锰掺杂硅的磁和电子输运性质

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Polycrystalline Si1-xMnx(x = 0.005, 0.01, and 0.015) samples were prepared by the arc-melting method. Powder x-ray diffraction analysis demonstrates that the light Mn doping does not change the crystalline structure of silicon. Magnetic studies reveal that the ferromagnetism can be developed in all Mn-doped samples and the Curie temperature (T-C) increases with increasing Mn doping content x. The effective magnetic moments are 4.15, 4.05 mu(B)/Mn for the samples with x = 0.01 and 0.015, respectively. The undoped sample shows semiconducting behavior in the whole studied temperature range, whereas a metal-insulator transition can be observed near T-C for all doped samples. The thermally activated conducting mechanism dominates the low temperature transport properties of the doped samples. The activation energy obtained from the fitting decreases monotonously with increasing x. In addition, the anomalous Hall effect below T-C was observed from the magnetic field dependence of the Hall resistivity curves. (c) 2006 Elsevier Ltd. All rights reserved.
机译：通过电弧熔化法制备了多晶Si1-xMnx（x = 0.005、0.01和0.015）样品。粉末X射线衍射分析表明，轻锰掺杂不会改变硅的晶体结构。磁性研究表明，在所有掺杂Mn的样品中都可以形成铁磁性，并且居里温度（T-C）随着Mn掺杂含量x的增加而增加。对于x = 0.01和0.015的样品，有效磁矩分别为4.15、4.05 mu（B）/ Mn。未掺杂样品在整个研究温度范围内均表现出半导体性能，而对于所有掺杂样品，在T-C附近都可以观察到金属-绝缘体的转变。热激活的传导机制支配了掺杂样品的低温传输特性。从配件获得的激活能量随x的增加而单调降低。另外，从霍尔电阻率曲线的磁场依赖性观察到低于T-C的霍尔效应。 （c）2006 Elsevier Ltd.保留所有权利。

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