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Spectroscopy of excitons and shallow impurities in isotopically enriched silicon - electronic properties beyond the virtual crystal approximation

机译：同位素富集硅中的激子和浅杂质的光谱学-电子性质超出了虚拟晶体近似

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Recent high resolution spectroscopic studies of excitonic and impurity transitions in high-quality samples of isotopically enriched Si have dramatically expanded our understanding of the effects of isotopic composition on the electronic properties of semiconductors. Prior to these studies on Si, the results for other semiconductors, focusing mainly on the isotopic dependence of the electronic band gap energy E-G in the T -> 0 limit, could all be explained within the virtual crystal approximation (VCA), in which only the average isotopic mass was relevant. Remarkably, not only were the effects of isotopic randomness observable in natural Si (when compared to enriched Si-28), but the random isotopic distribution present in natural Si was found to be the true source of what had been thought of as 'fundamental' spectroscopic limits in Si, including the linewidths of bound exciton emission lines and impurity absorption transitions, and the 'intrinsic' acceptor ground state splitting. Many of these transitions are far narrower in highly enriched Si-28 than in the most perfect natural Si, challenging existing spectroscopic methods, and opening up new possibilities for precision measurements, and for the observation of new physics. (c) 2004 Elsevier Ltd. All rights reserved.
机译：最近对高同位素富集硅样品中的激子和杂质跃迁进行了高分辨率光谱研究，极大地扩展了我们对同位素组成对半导体电子性能影响的理解。在对Si进行这些研究之前，其他半导体的结果主要集中在电子带隙能量EG在T-> 0极限范围内的同位素依赖性，都可以在虚拟晶体近似（VCA）中进行解释，其中仅平均同位素质量是相关的。值得注意的是，不仅在天然硅中观察到了同位素随机性的影响（与富集的Si-28相比），而且天然硅中存在的随机同位素分布也被认为是“基本”现象的真正来源。 Si的光谱极限，包括束缚的激子发射线的线宽和杂质吸收跃迁，以及“本征”受体基态分裂。与最完美的天然硅相比，高浓缩硅28中的许多转变要狭窄得多，挑战了现有的光谱方法，并为精确测量和新物理的观察开辟了新的可能性。 （c）2004 Elsevier Ltd.保留所有权利。

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