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FMR studies in the TbFeCo/GdFeCoSi bilayers

机译:TbFeCo / GdFeCoSi双层中的FMR研究

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Bilayers, TbFeCo/GdFeCoSi, made by sputtering on glass substrate with buffer and capping layers were studied by measuring the hysteresis loop and by ferromagnetic resonance (FMR). When the field H was applied along the film normal, a double H_C hysteresis loop related to the two sublayers was observed. In ferromagnetic resonance measurements, a peculiar out-of-plane angular dependence of FMR spectrum was obtained. When scanning field H was 0-637 kA/m less than the anisotropy field of TbFeCo sublayer, two FMR peaks were observed. One peak was characteristic of uniaxial and unidirectional anisotropy. The anisotropy constants were obtained by fitting the data with the theory of FMR, and this peak was considered to be related to the low anisotropy GdFeCoSi layer. The second peak appeared only when the dc field H was orientated in a limited angular range around 180°. This peak was considered to be related to an uncoupled interfacial GdFeCoSi sublayer near Al capping layer. However, when H was scanned between 0-1114 kA/m, only one peak is observed due to magnetization reversal of TbFeCo layer with uniaxial anisotropy.
机译:通过测量磁滞回线和铁磁共振(FMR),研究了在具有缓冲层和覆盖层的玻璃基板上溅射制备的双层TbFeCo / GdFeCoSi。当沿薄膜法线施加磁场H时,观察到与两个子层有关的双H_C磁滞回线。在铁磁共振测量中,获得了FMR谱的特殊面外角度依赖性。当扫描场H比TbFeCo子层的各向异性场小0-637 kA / m时,观察到两个FMR峰。一个峰是单轴和单向各向异性的特征。通过将数据与FMR理论拟合来获得各向异性常数,该峰被认为与低各向异性GdFeCoSi层有关。仅当直流磁场H在180°附近的有限角度范围内取向时,第二个峰才出现。该峰被认为与Al覆盖层附近的未耦合界面GdFeCoSi子层有关。然而,当在0-1114kA / m之间扫描H时,由于具有单轴各向异性的TbFeCo层的磁化反转,仅观察到一个峰。

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