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首页> 外文期刊>Solid State Communications >Ferromagnetism in amorphous Ge1-xMnx grown by low temperature vapor deposition
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Ferromagnetism in amorphous Ge1-xMnx grown by low temperature vapor deposition

机译：低温气相沉积法生长的非晶Ge1-xMnx中的铁磁性

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Magnetic properties of amorphous Ge1-xMnx thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was similar to 35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge1-xMnx thin films are 5.0 X 10(-4) similar to 100 Omega cm at room temperature and decrease, with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge1-xMnx thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration.. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Gel -,Mn, thin films have p-type carrier and hole densities are in the range from 7 X 10(17) to 2 X 10(22) cm(-1). (c) 2005 Published by Elsevier Ltd.
机译：研究了非晶Ge1-xMnx薄膜的磁性。通过使用热蒸发器在（100）硅晶片上以373 K生长薄膜。生长速率类似于35 nm / min，平均膜厚约为500 nm。 Ge1-xMnx薄膜的电阻率在室温下为5.0 X 10（-4），类似于100Ωcm，并且随着Mn浓度的增加而降低。低温磁化特性和在各种温度下测得的磁滞回线表明，非晶Ge1-xMnx薄膜是铁磁的，但随着温度的升高，铁磁磁化逐渐变为顺磁。居里温度和饱和磁化强度随Mn浓度的变化而变化。沉积膜的居里温度为80-160 K，5 K时饱和磁化强度为35-100 emu / cc。室温下的霍尔效应测量表明非晶态凝胶- ，薄膜具有p型载流子，空穴密度在7 X 10（17）到2 X 10（22）cm（-1）的范围内。 （c）2005年由Elsevier Ltd.发布。

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