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Metallization of the Ge(111) surface at high-temperature probed by energy-loss and Auger spectroscopies

机译：能量损失和俄歇光谱研究高温下Ge（111）表面的金属化

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We present new electron energy-loss spectroscopy (EELS) and Auger (AES) experiments aimed to study the structural transition of the Ge(111) surface taking place at high temperatures. Our advanced high-temperature set-up allowed us to collect accurate EELS spectra near the M-2,M-3 excitation edges and AES MMV and MVV spectra, corresponding to different probing depths ranging from 4 to 10 angstrom. The metallization of the surface has been clearly detected by the shift of the M-2,M-3 edge and of the MMV, MVV Auger energies. A detailed study of the transition has been perfonned using a fine temperature step under thermal equilibrium conditions. The AES and EELS experiments show that a sudden semiconductor-metal transition takes place at about 1000 K involving mainly the topmost layers. Deeper layers within 10 angstrom are also involved in the metallization process (in a range of 10 above 1010 K) and a smooth change in the topmost layers is also observed at higher temperatures up to 1070 K. These transitions are not fully reversible upon cooling (down to 870 K). Structural and electronic characteristics of the surface transition are discussed in light of available models. (c) 2005 Elsevier Ltd. All rights reserved.
机译：我们目前新的电子能量损失谱（EELS）和俄歇（AES）实验旨在研究发生在高温下的Ge（111）表面的结构转变。我们先进的高温设置使我们能够在M-2，M-3激发边缘和AES MMV和MVV光谱附近收集准确的EELS光谱，对应于4至10埃的不同探测深度。通过M-2，M-3边缘和MMV，MVV Auger能量的移动，可以清楚地检测到表面的金属化。在热平衡条件下，使用精细的温度步骤对转变进行了详细的研究。 AES和EELS实验表明，突然的半导体-金属跃迁发生在大约1000 K处，主要涉及最顶层。 10埃以下的更深层也参与了金属化过程（在1010 K以上的10范围内），并且最高温度达到1070 K时也观察到最顶层的平滑变化。这些转变在冷却时并不能完全逆转（降至870 K）。根据可用的模型讨论了表面过渡的结构和电子特性。 （c）2005 Elsevier Ltd.保留所有权利。

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