• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Solid State Communications >Effect of electron-beam irradiation on the magnetic properties of Ga_(1-x)Mn_xAs thin films grown on GaAs (100) substrates
【24h】

Effect of electron-beam irradiation on the magnetic properties of Ga_(1-x)Mn_xAs thin films grown on GaAs (100) substrates

机译：电子束辐照对在GaAs（100）衬底上生长的Ga_（1-x）Mn_xAs薄膜的磁性的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The effect of electron-beam irradiation on the magnetic properties of (Gai_(1-x)Mn_x)As thin films grown on GaAs (100) substrates by using molecular beam epitaxy was investigated. The ferromagnetic transition temperature (T_c) of the annealed (Ga_(0.933)Mn_(0.067))As thin films was 160 K. The T_c value for the as-grown (Ga_(0.933)Mn_(0.067))As thin films drastically decreased with increasing electron-beam current. This significant decrease in the T_c value due to electron-beam irradiation originated from the transformation of Mn substituted atoms, which contributed to the ferromagnetism, into Mn interstitials or Mn-related clusters. These results indicate that the magnetic properties of (Ga_(1-x)Mn_xAs thin films grown on GaAs (100) substrates are significantly affected by electron-beam irradiation.
机译：利用分子束外延研究了电子束辐照对在GaAs（100）衬底上生长的（Gai_（1-x）Mn_x）As薄膜磁性的影响。退火的（Ga_（0.933）Mn_（0.067））As薄膜的铁磁转变温度（T_c）为160 K.生长的（Ga_（0.933）Mn_（0.067））As薄膜的T_c值急剧下降随着电子束电流的增加。由于电子束辐照引起的T_c值的显着下降，这是由于Mn取代原子转变成Mn间隙或Mn相关簇而引起的，该取代原子有助于铁磁性。这些结果表明，生长在GaAs（100）衬底上的（Ga_（1-x）Mn_xAs薄膜的磁性受到电子束辐射的显着影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号