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首页> 外文期刊>Solid State Communications >Electromechanical properties and dielectric behavior of (Bi_(1/2)Na_(1/2))_((1-1.5x))Bi_xTiO_3 lead-free piezoelectric ceramics
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Electromechanical properties and dielectric behavior of (Bi_(1/2)Na_(1/2))_((1-1.5x))Bi_xTiO_3 lead-free piezoelectric ceramics

机译：（Bi_（1/2）Na_（1/2））_（（1-1.5x））Bi_xTiO_3无铅压电陶瓷的机电性能和介电性能

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摘要

Bismuth doped bismuth sodium titanate ceramics [(Bi_(1/2)Na_(1/2))_((1-1.5x))Bi_xTiO_3, x = 0 to 0.06] were prepared, and the resulting effects on the microstructure and dielectric properties were examined. All of the Bi-doped ceramics exhibited a single phase of perovskite structure with rhombohedral symmetry. The poling leakage current was significantly reduced by the doping of Bi, facilitating the poling process of the ceramics. The doping with Bi enhances the piezoelectric properties and increases the dielectric constant and the dielectric loss of the ceramics. At 2 mol% Bi-doping level, the ceramics exhibit a large remanent polarization of 47 μC/cm~2 and a relatively low coercive field of 71 kV/cm, while their d_(33) and k_p reach a maximum value of 95 pC/N and 21%, respectively.
机译：制备了铋掺杂钛酸钠铋陶瓷[（Bi_（1/2）Na_（1/2））_（（1-1.5x））Bi_xTiO_3，x = 0至0.06]，并且其对微结构和介电常数的影响性能进行了检查。所有的Bi掺杂陶瓷均表现出具有菱形对称性的钙钛矿结构单相。通过掺杂Bi可以显着降低极化泄漏电流，从而有利于陶瓷的极化过程。 Bi的掺杂增强了压电性能并增加了陶瓷的介电常数和介电损耗。当Bi掺杂量为2 mol％时，陶瓷的剩余极化强度为47μC/ cm〜2，矫顽场相对较低，为71 kV / cm，而d_（33）和k_p达到最大值95 pC。 / N和21％。

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