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首页> 外文期刊>Solid State Communications >Structural and transport properties of cubic spinel ZnCo_2O_4 thin films grown by reactive magnetron sputtering
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Structural and transport properties of cubic spinel ZnCo_2O_4 thin films grown by reactive magnetron sputtering

机译：反应磁控溅射制备立方尖晶石ZnCo_2O_4薄膜的结构和传输性能

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摘要

We report on the growth of cubic spinel ZnCo_2O_4 thin films by reactive magnetron sputtering and bipolarity of their conduction type by tuning of oxygen partial pressure ratio in the sputtering gas mixture. Crystal structure of zinc cobalt oxide films sputtered in an oxygen partial pressure ratio of 90% was found to change from wurtzite Zn_(1-x)Co_xO to spinel ZnCo_2O_4 with an increase of the sputtering power ratio between the Co and Zn metal targets, D_(Co)/D_(Zn), from 0.1 to 2.2. For a fixed D_(Co)/D_(Zn) of 2.0 yielding single-phase spinel ZnCo_2O_4 films, the conduction type was found to be dependent on the oxygen partial pressure ratio: n-type and p-type for the oxygen partial pressure ratio below ～70% and above ～85%, respectively. The electron and hole concentrations for the ZnCo_2O_4 films at 300 K were as high as 1.37 x 10~(20) and 2.81 X 10~(20)cm~(-3), respectively, with a mobility of more than 0.2 cm~2/V s and a conductivity of more than 1.8 S cm~(-1).
机译：我们报告了反应性磁控溅射法生长立方尖晶石ZnCo_2O_4薄膜的情况，并通过调节溅射气体混合物中的氧分压比来表征其导电类型的双极性。发现随着氧分压比为90％溅射的钴酸锌锌膜的晶体结构从纤锌矿Zn_（1-x）Co_xO变为尖晶石ZnCo_2O_4，Co和Zn金属靶D_的溅射功率比增加。 （Co）/ D_（Zn），从0.1至2.2。对于固定的D_（Co）/ D_（Zn）为2.0的单相尖晶石ZnCo_2O_4薄膜，发现导电类型取决于氧分压比：氧分压比为n型和p型分别低于〜70％和高于〜85％。 ZnCo_2O_4薄膜在300 K时的电子和空穴浓度分别高达1.37 x 10〜（20）和2.81 X 10〜（20）cm〜（-3），迁移率大于0.2 cm〜2 / V s且电导率大于1.8 S cm〜（-1）。

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