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Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit

机译：极端量子极限下n型GaSb中霍尔系数的磁振荡

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摘要

Magnetoquantum oscillations of the Hall coefficient R_H were observed in Te-doped GaSb layers grown by molecular beam epitaxy. The free electron densities were in the low 10~(16) cm~(-3) range or even slightly lower, thus achieving, for the first time in GaSb, the extreme quantum limit, where all the electrons occupy the spin-split 0~((+)) Landau level (LL). Similarly to other known cases, the amplitude of the last maximum of R_H could be explained as enhanced by the metal-to-insulator transition of the spin-down electron system in the n = 0 LL. The occurrence of the last negative oscillation of R_H below its classical value, called Hall dip, could be frustrated, in samples with sufficiently low carrier densities, by an incipient carrier freeze-out at donor impurities induced by the magnetic field.
机译：在通过分子束外延生长的掺Te的GaSb层中观察到霍尔系数R_H的磁量子振荡。自由电子密度处于10〜（16）cm〜（-3）的低范围甚至更低，因此，在GaSb中首次达到了极限量子极限，其中所有电子都占据了自旋分裂0 〜（（+））朗道水平（LL）。与其他已知情况类似，R_H的最后一个最大值的振幅可以解释为在n = 0 LL时自旋电子系统的金属向绝缘体过渡。在具有足够低载流子密度的样品中，R_H的最后一个负振荡低于其经典值（称为霍尔骤降）的发生可能会由于磁场引起的供体杂质的初始载流子冻结而受阻。

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