The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry

L.A. Ponomarenko; D.T.N. de Lang; A. de Visser; V.A. Kulbachinskii; G.B. Galiev; H. Kuenzel; A.M.M. Pruisken

首页> 外文期刊>Solid State Communications >The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry

【24h】

The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry

机译：载流子密度梯度对在霍尔棒几何中测量的磁传输数据的影响

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by reversing the polarity of the magnetic field. We offer a simple explanation for this effect and discuss implications for extracting conductivity flow diagrams of the integer quantum Hall effect.

机译：我们已经在存在小的载流子密度梯度的情况下，在霍尔棒几何结构中测量了二维电子气的磁传输。我们发现，通过反转磁场的极性，在霍尔棒两侧测量的纵向电阻会互换。我们对此效应提供了简单的解释，并讨论了提取整数量子霍尔效应电导率流程图的含义。

著录项

来源
《Solid State Communications》 |2004年第10期|p.705-710|共6页
作者
L.A. Ponomarenko; D.T.N. de Lang; A. de Visser; V.A. Kulbachinskii; G.B. Galiev; H. Kuenzel; A.M.M. Pruisken;
展开▼
作者单位

"Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
D. Magnetotransport; D. Quantum Hall effect;

机译：D.电磁运输;D。量子霍尔效应;

相似文献

外文文献
中文文献
专利

1. Magnetotransport measurements on overgrown cleaved edge heterostructures in Hall bar geometry [J] . Lermer M, Reinwald E, Wegscheider W, Physica, E. Low-dimensional systems & nanostructures . 2006,第1a2期

机译：霍尔棒几何中长满的劈裂边缘异质结构的磁传输测量
2. Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO [J] . Brochen Stephane, Feuillet Guy, Pernot Julien Journal of Applied Physics . 2014,第16期

机译：温度相关的霍尔载流子密度和霍尔迁移率数据的供体和受体配合的当量：ZnO的情况
3. Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO [J] . Stephane Brochen, Guy Feuillet, Julien Pernot Journal of Applied Physics . 2014,第16期

机译：温度相关的霍尔载流子密度和霍尔迁移率数据的供体和受体配合的当量：ZnO的情况
4. Magnetotransport On Evenly Curved Hall-Bars In InGaAs/GaAs-Microtubes [C] . S. Mendach, H. Welsch, Ch. Heyn, International Conference on the Physics of Semiconductors . 2005

机译：在Ingaas / Gaas-microtubes的均匀弯曲霍尔酒吧的Magnetotransport
5. Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method. [D] . Chidambaram, Thenappan. 2015

机译：使用门控霍尔法提取InGaAs金属氧化物半导体结构中的载流子迁移率和界面陷阱密度。
6. Influence of free charge carrier density on the magnetic behavior of (ZnCo)O thin film studied by Field Effect modulation of magnetotransport [O] . E. Bellingeri, S. Rusponi, A. Lehnert, -1

机译：自由载流子密度对磁传输场效应调制研究（ZnCo）O薄膜磁性能的影响
7. The effect of a carrier density gradient on magnetotransport data measured in Hall bar geometry [O] . Ponomarenko, L., de Lang, D.T.N., de Visser, A., 2004

机译：载流子密度梯度对在霍尔棒几何结构中测得的磁传输数据的影响

The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry

摘要

著录项

相似文献

相关主题

期刊订阅