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Optical properties of Tm-doped GaSe single crystals

机译：掺Tm的GaSe单晶的光学性质

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Optical properties of Tm-doped GaSe single crystals were investigated by measurements of optical absorption and photoluminescence. The single crystals were grown by the Bridgman technique. The X-ray diffraction analysis revealed that the single crystals were in the ε-type GaSe phase. The optical absorption spectra showed a sharp absorption peak at 582 nm near the band edge, which is due to direct free exciton. The temperature dependence of the energy of the exciton absorption peak was well fitted by the Varshni relation. In the photoluminescence spectrum at 10 K, we observed a very weak emission peak at 586 nm, a relatively strong emission peak centered at 613 nm, and several sharp and narrow emission peaks in the 790-840 nm region. The two emission peaks at 586 and 613 nm were associated with intrinsic emission lines due to direct free exciton and indirect bound exciton. The emission peaks in the 790-840 nm region, which were related to extrinsic emission, were assigned as due to the ~3F_4 → ~3H_6 transition of Tm~(3+) ions with a low symmetry of D_3 in the host lattice.
机译：通过测量光吸收和光致发光来研究掺杂Tm的GaSe单晶的光学性质。通过Bridgman技术生长单晶。 X射线衍射分析表明，单晶处于ε型GaSe相。光学吸收光谱在靠近带边缘的582 nm处显示一个尖锐的吸收峰，这是由于直接自由激子引起的。激子吸收峰能量的温度依赖性通过Varshni关系很好地拟合。在10 K的光致发光光谱中，我们观察到在586 nm处有一个非常弱的发射峰，在613 nm处有一个相对强的发射峰，在790-840 nm区域有几个尖锐和窄的发射峰。由于直接自由激子和间接结合激子，在586和613 nm处的两个发射峰与本征发射谱相关。归因于主体晶格中D_3对称性低的Tm〜（3+）离子的〜3F_4→〜3H_6跃迁，与外部发射有关的790-840 nm区域内的发射峰被指定。

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