Crystallization of amorphous Co2MnSi thin film

Kim SJ; Lim DH; Yoon CS; Kim CK

首页> 外文期刊>Solid State Communications >Crystallization of amorphous Co2MnSi thin film

【24h】

Crystallization of amorphous Co2MnSi thin film

机译：非晶态Co2MnSi薄膜的结晶

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Amorphous Co2MnSi thin film was deposited using radio-frequency sputtering. The amorphous film crystallized into a single-phased L2(1) structure at 500 degreesC, which was highly disordered. The structure was meta-stable as the crystallized film decomposed upon further heating. Increasing the annealing temperature to 600 degreesC precipitated fee Co together with Co2MnSi. Magnetic measurements showed that the as- deposited amorphous film was paramagnetic, exhibiting a spin glass state below 44 K. The phase transition at 500 degreesC produced a ferromagnetic Co2MnSi thin film whose saturation magnetic moment was considerably lower than reported values due to the disordered structure of the crystallized film. (C) 2004 Elsevier Ltd. All rights reserved.

机译：使用射频溅射沉积非晶态的Co2MnSi薄膜。该非晶膜在500℃下结晶成单相L2（1）结构，这是高度无序的。随着结晶膜在进一步加热下分解，该结构是亚稳定的。将退火温度提高到600℃，与Co2MnSi一起沉淀出Co。磁性测量表明，沉积的非晶态膜是顺磁性的，在44 K以下表现出自旋玻璃态。在500℃下的相变产生了铁磁Co2MnSi薄膜，由于其无序结构，其饱和磁矩大大低于报道的值。结晶膜。（C）2004 Elsevier Ltd.保留所有权利。

著录项

来源
《Solid State Communications》 |2004年第6期|p. 361-364|共4页
作者
Kim SJ; Lim DH; Yoon CS; Kim CK;
展开▼
作者单位

Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
amorphous; magnetic thin film; half metallic ferromagnets; SPIN-GLASS BEHAVIOR; TRANSPORT-PROPERTIES; ALLOYS;

机译：非晶态;磁性薄膜;半金属铁磁体;自旋玻璃行为;运输特性;合金;

相似文献

外文文献
中文文献
专利

1. Crystallization and magnetic properties in amorphous Co2MnSi alloy films [J] . Wang Ke, Dong Shuo, Xu Zhan, Materials Letters . 2016,第OCTa1期

机译：非晶态Co2MnSi合金薄膜的结晶和磁性。
2. Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions [J] . Yamamoto M, Ishikawa T, Taira T, Journal of Physics. Condensed Matter . 2010,第16期

机译：Heusler合金薄膜中的缺陷对Co2MnSi / MgO / Co2MnSi和Co2MnGe / MgO / Co2MnGe磁性隧道结的自旋隧穿特性的影响
3. Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions [J] . Yamamoto M, Ishikawa T, Taira T, Journal of Physics. Condensed Matter . 2010,第16期

机译：Heusler合金薄膜中的缺陷对Co2MnSi / MgO / Co2MnSi和Co2MnGe / MgO / Co2MnGe磁性隧道结的自旋隧穿特性的影响
4. Crystallization of Amorphous Si Thin Films Using Sub-nm Nickel Oxide Thin Layers Deposited by Atomic Layer Deposition [C] . B. S. So, W. Cho, Y. H. You, Symposium on Atomic Layer Deposition Applications . 2007

机译：用原子层沉积沉积的亚NM镍氧化物薄层的无定形Si薄膜的结晶
5. Enhanced crystallization of amorphous silicon thin films by nano-crystallite seeding. [D] . Trask, Jason. 2013

机译：通过纳米晶种增强非晶硅薄膜的结晶。
6. Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films [O] . Sreekanth K. Mahadeva, Jincheng Fan, Anis Biswas, 2013

机译：非晶态和纳米晶化的Dc溅射沉积MgO薄膜的磁性
7. Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor [O] . Wang Meihan, Lei Hao, Seki Yoshiyuki, 2013

机译：Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor

Crystallization of amorphous Co2MnSi thin film

摘要

著录项

相似文献

相关主题

期刊订阅