Preparation of (CdO)(1-x)(PbO)(x) and (CdS)(1-x)(PbS)(x) thin films by spray pyrolysis technique and their characterization

Kumar VK; Ramamurthi K; Elangovan E

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Preparation of (CdO)(1-x)(PbO)(x) and (CdS)(1-x)(PbS)(x) thin films by spray pyrolysis technique and their characterization

机译：喷雾热解法制备（CdO）（1-x）（PbO）（x）和（CdS）（1-x）（PbS）（x）薄膜及其表征

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Mixed thin films of (CdO)(1-x)(PbO)(x) and (CdS)(1-x)(PbS)(x) (x = 0.25) were prepared on glass substrates by spray pyrolysis technique for various substrate temperatures 300, 320 and 340degreesC. Structural and optical properties were studied. XRD studies reveal the formation of mixed films. The substrate temperature of 340degreesC seems to be critical for the formation of CdO-PbO mixed films. It is observed that (CdS)(1-x)(PbS)(x) mixed films were formed at all the three substrate temperatures. The direct band gap value of (CdO)(1-x)(PbO)(x) and (CdS)(1-x)(PbS)(x) mixed films is about 2.6 and 2.37 eV, respectively. (C) 2004 Elsevier Ltd. All rights reserved.

机译：通过喷雾热解技术在玻璃基板上制备（CdO）（1-x）（PbO）（x）和（CdS）（1-x）（PbS）（x）（x = 0.25）的混合薄膜温度300、320和340摄氏度。研究了结构和光学性质。 XRD研究揭示了混合膜的形成。 340℃的基板温度对于形成CdO-PbO混合膜似乎至关重要。观察到在所有三个基板温度下都形成了（CdS）（1-x）（PbS）（x）混合膜。（CdO）（1-x）（PbO）（x）和（CdS）（1-x）（PbS）（x）混合膜的直接带隙值分别约为2.6和2.37 eV。（C）2004 Elsevier Ltd.保留所有权利。

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来源
《Solid State Communications》 |2004年第10期|p. 673-677|共5页
作者
Kumar VK; Ramamurthi K; Elangovan E;
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作者单位

Bharathidasan Univ, Dept Phys, Tiruchchirappalli 620024, India;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
thin films; semiconductors; X-ray scattering; optical properties; OPTICAL-PROPERTIES; OXIDE FILM;

机译：薄膜;半导体;X射线散射;光学性能;光学性能;氧化膜;

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Preparation of (CdO)(1-x)(PbO)(x) and (CdS)(1-x)(PbS)(x) thin films by spray pyrolysis technique and their characterization

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