Anomalous PL brightening caused by partial Auger recombination of a (D-0, X) complex during and impact ionization avalanche in n-GaAs

Aoki K; Hosokawa D

首页> 外文期刊>Solid State Communications >Anomalous PL brightening caused by partial Auger recombination of a (D-0, X) complex during and impact ionization avalanche in n-GaAs

【24h】

Anomalous PL brightening caused by partial Auger recombination of a (D-0, X) complex during and impact ionization avalanche in n-GaAs

机译：n-GaAs中的（D-0，X）络合物在部分和俄亥俄电离雪崩过程中的部分俄歇重组导致PL异常变亮

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Partial Auger recombination of the (D-0, X) bound-exciton in n-GaAs at 4.2 K during an impact ionization avalanche under an applied pulse voltage has been investigated. The bright photoluminescence (PL)-pattern observed by applying the pulse voltage, characterizes well the formation of a current density filament. The observation of the bright PL spectra inside the current density filament gives a quite new result concerning the partial Auger recombination process of the (D-0, X) complex, leaving the neutral donor in the excited states. (C) 2004 Elsevier Ltd. All rights reserved.

著录项

来源
《Solid State Communications》 |2004年第10期|p. 697-700|共4页
作者
Aoki K; Hosokawa D;
展开▼
作者单位

Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
electronic transport; optical properties; recombination and trapping; luminescence;

机译：电子传输;光学性质;重组和俘获;发光;

相似文献

外文文献
专利

1. Anomalous brightening of donor-bound exciton photoluminescence caused by a pulsed electric field in n-GaAs [J] . Aoki K. Physica, B. Condensed Matter . 2001,第0期

机译：n-GaAs中脉冲电场引起的供体结合激子光致发光异常增亮
2. Evolution of bright (D+, X) PL pattern during impact ionization avalanche in n-GaAs [J] . Aoki K. Physica, B. Condensed Matter . 2002,第1a4期

机译：n-GaAs中碰撞电离雪崩过程中明亮（D +，X）PL模式的演变
3. Photoluminescence study of a current density filament during an impact ionization avalanche in n-GaAs [J] . Aoki K Physics Letters, A . 2005,第5a6期

机译：n-GaAs中碰撞电离雪崩过程中电流密度灯丝的光致发光研究
4. Photoluminescence Brightening due to Partial Auger Recombination Process of the (D0,X) Complex by the Impact Ionization Avalanche in n-GaAs [C] . Kazunori Aoki, Daisuke Hosokawa International Conference on the Physics of Semiconductors . 2005

机译：由于N-GaAs中的冲击电离雪崩（D0，X）复合物的部分螺旋钻重组过程而增强的光致发光
5. Modeling and Engineering Impact Ionization in Avalanche Photodiodes for Near and Mid Infrared Applications. [D] . Ramirez, David A. 2012

机译：雪崩光电二极管中近红外和中红外应用的建模和工程影响电离。
6. Abundance of molecular triple ionization by double Auger decay [O] . A. Hult Roos, J. H. D. Eland, J. Andersson, -1

机译：双俄歇衰变导致分子三重离子化的丰度
7. Accurate first principles detailed balance determination of Auger recombination and impact ionization rates in semiconductors [O] . Picozzi, S., Asahi, R., Geller, C. B., 2002

机译：准确的第一原则详细说明了俄歇的平衡确定半导体中的复合和碰撞电离率
8. Theory of Impact Ionization and Auger Recombination in Hg(1-x)Cd(x)Te [R] . Gelmont, B., Kim, K., Shur, M. 1992

机译：Hg（1-x）Cd（x）Te中碰撞电离和俄歇复合理论

Anomalous PL brightening caused by partial Auger recombination of a (D-0, X) complex during and impact ionization avalanche in n-GaAs

摘要

著录项

相似文献

相关主题

期刊订阅