On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

Ghibaudo G.; Aouad M.; Casse M.; Martinie S.; Poiroux T.; Balestra F.

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On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

机译：在MOSFET中亚阈值摆动温度依赖性的建模对低温温度

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A comprehensive analysis of the MOSFET subthreshold swing for a 2D subband with exponential band tail of states is first proposed. Then, a compact analytical expression for the subthreshold swing as a function of temperature is derived, well accounting for both its cryogenic temperature saturation and classical higher temperature increase. Moreover, a generalized subthreshold swing calculation applicable to the situation where the MOSFET drain current should be evaluated from the conductivity function within the Kubo-Greenwood formalism is developed.

机译：首先提出了对具有状态指数带尾的2D子带的MOSFET亚阈值摆动的全面分析。然后，推导出作为温度的函数的亚阈值摆动的紧凑分析表达，井井用良好的饱和度饱和度和经典较高的温度升高。此外，显影了适用于应该从Kubo-Greenwood形式主义内从电导函数评估MOSFET漏极电流的情况的通知亚阈值的摆动计算。

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来源
《Solid-State Electronics》 |2020年第8期|107820.1-107820.4|共4页
作者
Ghibaudo G.; Aouad M.; Casse M.; Martinie S.; Poiroux T.; Balestra F.;
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作者单位

Univ Grenoble Alpes MINATEC INPG IMEP LAHC F-38016 Grenoble France;

Univ Grenoble Alpes MINATEC LETI CEA F-38054 Grenoble France;

Univ Grenoble Alpes MINATEC LETI CEA F-38054 Grenoble France;

Univ Grenoble Alpes MINATEC LETI CEA F-38054 Grenoble France;

Univ Grenoble Alpes MINATEC LETI CEA F-38054 Grenoble France;

Univ Grenoble Alpes MINATEC INPG IMEP LAHC F-38016 Grenoble France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
MOSFET; Subthreshold swing; Model; Cryogenic temperature;

机译：MOSFET;亚阈值摆动;模型;低温温度;

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1. Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures [J] . Kao Kuo-Hsing, Wu Tzung Rang, Chen Hong-Lin, IEEE Electron Device Letters . 2020,第9期

机译：纳米级MOSFET的亚阈值摆动饱和度由于在低温温度下源排水隧道
2. Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs [J] . Samoju Visweswara Rao, Dubey Sarvesh, Tiwari Pramod Kumar Journal of Computational Electronics . 2015,第2期

机译：双金属四栅极（DMQG）MOSFET的准3D亚阈值电流和亚阈值摆幅模型
3. Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs [J] . Gopi Krishna Saramekala, Abirmoya Santra, Mirgender Kumar, Journal of Computational Electronics . 2014,第2期

机译：短沟道双金属栅（DMG）全耗尽型凹源极/漏极（Re-S / D）SOI MOSFET的分析亚阈值电流和亚阈值摆幅模型
4. Subthreshold Swing in Silicon Gate-All-Around Nanowire MOSFET at Cryogenic Temperature [C] . Shohei Sekiguchi, Min-Ju Ahn, Takuya Saraya, IEEE Electron Devices Technology and Manufacturing Conference . 2021

机译：在低温温度下在硅栅极 - 全周3纳米线MOSFET中的亚阈值摆动
5. Modeling and characterization of 4H-silicon carbide MOSFETs: High field, high temperature, and transient effects. [D] . Potbhare, Siddharth. 2008

机译：4H-碳化硅MOSFET的建模和表征：高场，高温和瞬态效应。
6. Origin and temperature dependence of radiation damage in biological samples at cryogenic temperatures [O] . Alke Meents, Sascha Gutmann, Armin Wagner, 2010

机译：低温下生物样品中辐射损伤的起源和温度依赖性
7. Two-dimensional(2D) subthreshold current and subthreshold swing modeling of double-material-gate(DMG) strained-Si(s-Si) on silicon-germanium(SiGe) MOSFETs. [O] . Mukhopadhyay A K 2014

机译：硅锗（SiGe）MOSFET上的双材料栅极（DMG）应变硅（s-Si）的二维（2D）亚阈值电流和亚阈值摆幅模型。

On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

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