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首页> 外文期刊>Solid-State Electronics >The mechanism of defects effect on carrier transport by employing multi- wavelength sub-bandgap lights on CdZnTe crystal
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The mechanism of defects effect on carrier transport by employing multi- wavelength sub-bandgap lights on CdZnTe crystal

机译：Cdznte晶体中使用多波长子带隙灯的缺陷对载波运输的机制

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摘要

The effect of different point defects in CdZnTe (CZT) crystals on carrier transport performance were discussed. The energy level and concentration of the traps were determined by the photo-induced current transient spectroscopy (PICTS). By adding the infrared light illumination into the PICTS experiment, the effect of sub-bandgap light on defects was observed. Meanwhile, several DC photoconductive experiments were done under different wavelength lights were used to explore the effect of the different defects on carrier transport properties of CZT crystals. Furthermore, the energy spectrum test was used to investigate the effect of sub-bandgap light on the energy resolution of CZT detectors. The data results showed that sub-bandgap light could effectively change the ionization state of defects. The doubly ionized Te antisite (Te-Cd(2+)) had the greatest effect on mobility-lifetime product(mu tau) of electrons owing to its stronger ability of capturing electrons and energy level located around the midgap. While the secondary ionized Cd vacancy (V-Cd(2-)), as considered as a hole trap, had the greatest effect on mu tau-product of holes. Consequently, choosing suitable infrared light can improve the detection performance of CZT crystal effectively.
机译：讨论了CDZNTE（CZT）晶体对载体传输性能的不同点缺陷的影响。陷阱的能级和浓度由光诱导的电流瞬态光谱法（SIGS）确定。通过将红外光照射添加到Picts实验中，观察到亚带隙光对缺陷的影响。同时，在不同波长灯下进行了几种DC光电导实验用于探讨不同缺陷对CZT晶体载体传输性质的影响。此外，使用能谱试验来研究子带隙光对CZT探测器能量分辨率的影响。数据结果表明，子带隙光可以有效地改变缺陷的电离状态。由于捕获位于中间藏点的电子和能量水平的较强能力，双电离的TE反刚性（TE-CD（2+））对电子的迁移寿命产品（MU TAU）的影响最大。虽然作为作为孔阱的次级电离CD空位（V-CD（2-））对孔的孔 - 孔产品具有最大的影响。因此，选择合适的红外光可以有效地改善CZT晶体的检测性能。

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  • 来源
    《Solid-State Electronics》 |2020年第8期|107823.1-107823.10|共10页
  • 作者

    Jin Chengwei; Min Jiahua; Liang Xiaoyan; Zhang Jijun; Shen Yue; Chen Jun; Dai Ling-en; Liang Shijin; Zhao Shuhao; Wang Linjun; Shi Haozhi;

  • 作者单位

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

    Shanghai Univ Sch Mat Sci & Engn Shanghai 200444 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CdZnTe; Defects; Sub-bandgap light; Mobility-lifetime product;

    机译：Cdznte;缺陷;子带隙灯;移动 - 寿命产品;

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