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首页> 外文期刊>Solid-State Electronics >Thermometric SOI lateral diodes for bolometric application: Comparison between Schottky and p-i-n diodes
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Thermometric SOI lateral diodes for bolometric application: Comparison between Schottky and p-i-n diodes

机译：散孔应用的温度测量横向二极管：肖特基和P-I-N二极管的比较

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摘要

The thermometric behavior of lateral 50-nm thin Silicon-On-Insulator (SOI) diodes are studied down to 80 K, close to liquid-nitrogen temperature. A comparison between PtSi-Si Schottky and implanted p-i-n diodes is presented. In this study, the intrinsic region is a moderately-doped n-type region. Key figures are extracted at room and cryogenic temperatures for each diode. A Temperature Coefficient of Current (TCC) of 6 %/K at 298 K and for a bias current of 10 pA/mu m is measured for both the Schottky Barrier Diode (SBD) and the p-i-n diode. Based on simulation results, both diode types should demonstrate an increase of the TCC in the cryogenic regime. However, experimentally, only the p-i-n configuration exhibits an increase with a TCC at 81.5 K reaching more than 15 %/K at low forward bias. Some arguments are presented to account for the discrepancy between simulation and experiment, especially in the case of the SBD. Suitability as thermometer for bolometric detection is discussed.
机译：将横向50-nm薄硅环 - 绝缘体（SOI）二极管的温度计量降至80 k，接近液氮温度。提出了PTSI / N-Si Schottky和注入的P-I-N二极管之间的比较。在该研究中，本征区域是一种中间掺杂的n型区域。在房间和每个二极管的低温温度下提取关键图。测量肖特基势垒二极管（SBD）和P-I-N二极管的298k和10Pa / mu m的偏置电流的电流系数（Tcc）的温度系数（Tcc）。基于仿真结果，二极管类型均应显示低温制度的TCC增加。然而，实验，仅P-I-N配置在低正向偏压下达到超过15％/ k的81.5 k的TCC增加。提出了一些论点以考虑模拟和实验之间的差异，特别是在SBD的情况下。讨论了作为热度计进行钻孔检测的适用性。

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