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首页> 外文期刊>Solid-State Electronics >Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors
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Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors

机译：质子诱导的AlGaN / GaN高电子迁移率晶体管的电解机理

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摘要

We studied the mechanism of the proton-induced electrical degradation of AlGaN/GaN high electron mobility transistors (HEMTs) through 5-MeV proton irradiation. First, the AlGaN/GaN heterostructure was exposed to protons with a fluence of 1 x 10(15)p/cm(2) to investigate the relationship between the radiation-caused damage in the heterostructure and the electrical characteristics of HEMTs. The HEMTs fabricated on a proton-irradiated AlGaN/GaN heterostructure showed slight degradation in dc characteristics and a positive shift in threshold voltage, compared with the HEMTs fabricated on an unirradiated heterostructure. This indicated that the proton radiation-induced defects in the AlGaN/GaN heterostructure were not dominant factors of characteristic degradation. After additional proton irradiation into both devices, more severe degradation in electrical characteristics was confirmed. The HEMTs fabricated on a proton-irradiated heterostructure showed the largest characteristic degradation in this work. It is expected that the secondary particles, attributed from the collision of proton and metal contacts such as ohmic and schottky, can cause the creation of additional defects, leading to significant degradation of device characteristics. In addition, the pre-existing defects in AlGaN/GaN heterostructures created first proton irradiation can also influence the characteristic degradation of devices.
机译：我们研究了质子诱导的AlGaN / GaN高电子迁移率晶体管（HEMT）通过5-MEV质子辐射的机理。首先，将AlGaN / GaN异质结构暴露于具有1×10（15）p / cm（2）的流量的质子，以研究辐射导致的异质结构损伤与Hemts的电特性之间的关系。与在未照射的异质结构上制造的血管相比，在质子辐照的AlGaN / GaN异质结构上制造的血管显示出在DC特性和阈值电压的正偏移中显示出微小的劣化。这表明AlGaN / GaN异质结构中的质子辐射诱导的缺陷不是特征性降解的主要因素。在额外的质子辐射到两个装置中，确认了电气特性的更严重降解。在质子辐照的异质结构上制造的血管显示出这项工作中最大的特征性降解。预计归因于质子和金属触点（如欧姆和肖特基）的碰撞归因的二次粒子会导致产生附加缺陷，导致器件特性的显着降低。此外，AlGaN / GaN异质结构中的预先存在的缺陷产生的第一质子辐射也可以影响器件的特征劣化。

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