TRANSPORT CHARACTERIZATION OF GaAs QUANTUM DOTS CONNECTED WITH QUANTUM WIRES FABRICATED BY SELECTIVE AREA METALORGANIC VAPOR PHASE EPITAXY

K. KUMAKURA; J. MOTOHISA; T. FUKUI

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TRANSPORT CHARACTERIZATION OF GaAs QUANTUM DOTS CONNECTED WITH QUANTUM WIRES FABRICATED BY SELECTIVE AREA METALORGANIC VAPOR PHASE EPITAXY

机译：GaAs量子点与选择性区域金属有机气相相表观联系的量子点的传输表征

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We fabricated novel quantum nanostructures where the quantum dots are connected with quantum wires using metalorganic vapor phase epitaxy (MOVPE) on (001) GaAs masked substrates. In particular a GaAs single electron transistor was successfully fabricated and its transport properties were investigated. We prepared tow devices which have artificially designed two - or three-prominences in the channel region. These prominences produced a quantum dot connecting with quantum wires in applying the gate voltage. By comparing the electrical properties of the two devices, we discussed a model for formation of quantum dot and tunneling barriers in the channel. investigated. We

机译：我们制造了新颖的量子纳米结构，其中在（001）GaAs掩模衬底上使用金属有机气相外延（MOVPE）将量子点与量子线相连。特别地，成功地制造了GaAs单电子晶体管并研究了其传输特性。我们准备了两个在通道区域人为设计两个或三个凸起的牵引装置。这些突出产生了在施加栅极电压时与量子线连接的量子点。通过比较两个设备的电性能，我们讨论了在通道中形成量子点和隧穿势垒的模型。调查。我们

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《Solid-State Electronics》 |1998年第8期|p.1277-1231|共45页
作者
K. KUMAKURA; J. MOTOHISA; T. FUKUI;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Two-way current switch using Coulomb blockade in GaAs quantum dots by selective area metalorganic vapor phase epitaxy [J] . Nakajima F., Ogasawara Y., Motohisa J., Physica, E. Low-dimensional systems & nanostructures . 2002,第2a4期

机译：通过选择性区域金属有机气相外延在GaAs量子点中使用库仑阻挡的双向电流开关
2. Photoluminescence of GaAs Bi/GaAs quantum dots grown by metalorganic vapor phase epitaxy [J] . Fitouri H., Chakir K., Chine Z., Materials Letters . 2015,第auga1期

机译：金属有机气相外延生长的GaAs Bi / GaAs量子点的光致发光
3. Effect of thin GaAs interface layer on InAs quantum dots grown on InGaAs/InP using metalorganic vapor phase epitaxy [J] . Yueming Qiu, David Uhl Journal of Crystal Growth . 2003,第3a4期

机译：薄GaAs界面层对金属有机气相外延生长在InGaAs / InP上的InAs量子点的影响
4. Fabrication and characterization of InGaAs-GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition [C] . Mark L. Osowski, Univ. of Illinois/Urbana-Champaign, Urbana, Emerging Components and Technologies for All-Optical Photonic Systems II . 1997

机译：选择性区域金属有机化学气相沉积法制备和表征InGaAs-GaAs量子线阵列
5. Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers. [D] . Mirin, Richard Paul. 1996

机译：InGaAs量子点和量子点激光器的交替分子束外延和表征。
6. Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates [O] . Sergio Bietti, Luca Esposito, Alexey Fedorov, 2015

机译：GaAs（111）A衬底上的液滴外延生长InAs量子点的特性和热退火效应
7. GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices [O] . Nakajima, Fumito, Ogasawara, Yuu, Motohisa, Junichi, 2001

机译：选择性区域金属有机气相外延生长的GaAs点线耦合结构及其在单电子器件中的应用

TRANSPORT CHARACTERIZATION OF GaAs QUANTUM DOTS CONNECTED WITH QUANTUM WIRES FABRICATED BY SELECTIVE AREA METALORGANIC VAPOR PHASE EPITAXY

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