A new T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap GAA MOSFET with enhanced subthreshold analog/RF performance for low power applications

著录项

• 来源
  《Solid-State Electronics》 |2014年第11期|13-17|共5页
• 作者

  Manoj Kumar; Subhasis Haldar; Mridula Gupta; R.S. Gupta;

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• 作者单位

  Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, New Delhi 110021, India;

  Department of Physics, Motilal Nehru College, University of Delhi, New Delhi 110021, India;

  Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, New Delhi 110021, India;

  Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, New Delhi 110086, India;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Gate All Around (GAA) MOSFET; Short channel effects (SCEs); Source/Drain Extension; Underlap Gate;

  机译：栅极全向（GAA）MOSFET;短通道效应（SCE）;源极/漏极扩展;潜门;