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Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs

机译：逐步设置操作可确保ReRAM的可靠开关均匀性和低工作电流

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摘要

In this paper, we demonstrated different filament formation abilities of two metal oxide layers for reliable switching uniformity of resistive random access memory (ReRAM). We observed, for the first time, set operation exhibited stepwise operation in Pt top electrode (TE)/Ti/HfO_x/TaO_x/Pt bottom electrode (BE) due to different filament formation abilities of HfO_x and TaO_x. Compared with the Pt/Ti/HfO_x/Pt, the inserted TaO_x in the triple-layer can act as a filament control layer for uniform switching. Thus, additionally inserted TaO_x plays an important role in ReRAM for its reliable switching. To achieve lower operating current and more uniform switching in the Pt/Ti/HfO_x,/TaO_x/Pt structure, we had controlled oxygen distributions of TaO_x layer. Consequently, we achieved a very low operating current (～45 μA) without switching uniformity degradation.
机译：在本文中，我们证明了两种金属氧化物层具有不同的细丝形成能力，以实现电阻随机存取存储器（ReRAM）的可靠开关均匀性。我们首次观察到，由于HfO_x和TaO_x的细丝形成能力不同，在Pt顶部电极（TE）/ Ti / HfO_x / TaO_x / Pt底部电极（BE）中，设置操作呈现逐步操作。与Pt / Ti / HfO_x / Pt相比，在三层中插入的TaO_x可以充当灯丝控制层，以实现均匀切换。因此，额外插入的TaO_x在ReRAM中起着可靠切换的作用。为了在Pt / Ti / HfO_x，/ TaO_x / Pt结构中实现更低的工作电流和更均匀的切换，我们控制了TaO_x层的氧分布。因此，我们实现了非常低的工作电流（〜45μA），而不会降低开关均匀性。

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  • 来源
    《Solid-State Electronics》 |2014年第12期|42-45|共4页
  • 作者

    Sangheon Lee; Jiyong Woo; Daeseok Lee; Euijun Cha; Hyunsang Hwang;

  • 作者单位

    Dept. of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea;

    Dept. of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea;

    Dept. of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea;

    Dept. of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea;

    Dept. of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Resistive switching; Reliability; Stepwise set; HfO_x; TaO_x;

    机译：电阻开关;可靠性;逐步设置;HfO_x;TaO_x;

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