Performance improvement of oxide thin-film transistors with a two-step-annealing method

著录项

• 来源
  《Solid-State Electronics》 |2014年第1期|9-12|共4页
• 作者

  Min Li; Linfeng Lan; Miao Xu; Hua Xu; Dongxiang Luo; Peng Xiao; Junbiao Peng;

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• 作者单位

  State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;

  State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;

  State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;

  State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;

  State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;

  State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;

  State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Thin-film transistor; IZO; Oxide semiconductor; Anneal;

  机译：薄膜晶体管;伊佐;氧化物半导体;退火;