Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation

著录项

• 来源
  《Solid-State Electronics》 |2014年第1期|53-58|共6页
• 作者

  Talitha Nicoletti; Sara Dereste dos Santos; Joao Antonio Martino; Marc Aoulaiche; Anabela Veloso; Malgorzata Jurczak; Eddy Simoen; Cor Claeys;

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• 作者单位

  LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, Trav. 3, No. 158, 05508-010 Sao Paulo, Brazil;

  LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, Trav. 3, No. 158, 05508-010 Sao Paulo, Brazil;

  LSI/PSI/USP, University of Sao Paulo, Av. Prof. Luciano Gualberto, Trav. 3, No. 158, 05508-010 Sao Paulo, Brazil;

  Imec, Leuven, Belgium;

  Imec, Leuven, Belgium;

  Imec, Leuven, Belgium;

  Imec, Leuven, Belgium;

  Imec, Leuven, Belgium,E.E. Dept., KU Leuven, Leuven, Belgium;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  UTBOX; FDSOI; High temperature; Underlap devices; Channel length scaling;

  机译：UTBOX;FDSOI;高温;叠底装置;通道长度缩放;