Automatic TCAD model calibration for multi-cellular Trench-IGBTs

Luca Maresca; Giovanni Breglio; Andrea Irace

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Automatic TCAD model calibration for multi-cellular Trench-IGBTs

机译：多单元Trench-IGBT的自动TCAD模型校准

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TCAD simulators are a consolidate tool in the field of the semiconductor research because of their predictive capability. However, an accurate calibration of the models is needed in order to get quantitative accurate results. In this work a calibration procedure of the TCAD elementary cell, specific for Trench IGBT with a blocking voltage of 600 V, is presented. It is based on the error minimization between the experimental and the simulated terminal curves of the device at two temperatures. The procedure is applied to a PT-IGBT and a good predictive capability is showed in the simulation of both the short-circuit and turn-off tests.

机译：TCAD仿真器具有预测能力，因此是半导体研究领域的巩固工具。但是，需要对模型进行准确的校准才能获得定量的准确结果。在这项工作中，提出了针对具有600 V阻断电压的Trench IGBT的TCAD基本单元的校准程序。它基于在两个温度下器件的实验和仿真终端曲线之间的误差最小化。该程序应用于PT-IGBT，并且在短路和关断测试的仿真中均显示出良好的预测能力。

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来源
《Solid-State Electronics》 |2014年第1期|36-43|共8页
作者
Luca Maresca; Giovanni Breglio; Andrea Irace;
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作者单位

Department of Electric Engineering and Information Technologies, University of Napoli 'Federico II', Napoli, Italy;

Department of Electric Engineering and Information Technologies, University of Napoli 'Federico II', Napoli, Italy;

Department of Electric Engineering and Information Technologies, University of Napoli 'Federico II', Napoli, Italy;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Calibration; Insulated gate bipolar transistor;

机译：校准;绝缘栅双极晶体管;

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Automatic TCAD model calibration for multi-cellular Trench-IGBTs

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