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首页> 外文期刊>Solid-State Electronics >Evaluation of voltage vs. pulse width modulation and feedback during set/reset verify-programming to achieve 10 million cycles for 50 nm HfO_2 ReRAM
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Evaluation of voltage vs. pulse width modulation and feedback during set/reset verify-programming to achieve 10 million cycles for 50 nm HfO_2 ReRAM

机译:在设置/重置验证编程期间评估电压与脉冲宽度调制和反馈的关系,以实现50 nm HfO_2 ReRAM达到1000万个周期

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摘要

50 nm HfO_2 resistive memory cells were measured by 6 × 6 verification variations to determine the optimal method to achieve 10~7 endurance and yield. The combination of pulse width incrementation during reset and pulse height modulation during set provided the most stable and highest cycling capability. Based on these results, a new conceptual model is proposed which combines the physical conduction model with direct tunneling, and provides a calculation method to predict resistance and explain degradation and reset failure. Furthermore, intermediate storing of programming information on a page basis is proposed in order to improve overall endurance.
机译:通过6×6验证变化量来测量50 nm HfO_2电阻存储单元,以确定达到10〜7耐力和良率的最佳方法。复位期间的脉冲宽度增加和设置期间的脉冲高度调制的组合提供了最稳定和最高的循环能力。基于这些结果,提出了一种将物理传导模型与直接隧穿相结合的新概念模型,并提供了一种预测电阻,解释退化和复位故障的计算方法。此外,提出了以页为基础的中间存储节目信息,以便提高整体耐久性。

著录项

  • 来源
    《Solid-State Electronics》 |2014年第1期|67-73|共7页
  • 作者单位

    Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan;

    Chuo University, Korakuen Campus Bldg #2 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551, Japan;

    Chuo University, Korakuen Campus Bldg #2 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ReRAM; Program verify; Endurance; Cycling;

    机译:ReRAM;程序验证;耐力;循环;

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