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首页> 外文期刊>Solid-State Electronics >Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices
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Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices

机译:SiGe器件中3D和准2D电子和空穴系统的玻尔兹曼输运方程的确定性求解器

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摘要

We present a review of recent advances in deterministic solvers for the Boltzmann transport equation for electrons and holes in a 3D and quasi 2D K-space and demonstrate the capabilities of deterministic solvers by two new examples: a THz SiGe HBT and a quantum well PMOSFET. Compared to the standard approach, the Monte Carlo method, these deterministic solvers have certain advantages. They yield exact stationary solutions and they allow small-signal and noise analysis directly in the frequency range from 0 to THz. Inclusion of magnetic fields, the Pauli principle or rare events causes no problems. Thus, it is now possible to calculate certain key figures of merit for devices based on the Boltzmann transport equation, which was previously very difficult or not possible at all. On the other hand, the deterministic solvers are more memory intensive and more difficult to code than the Monte Carlo method.
机译:我们对3D和准2D K空间中电子和空穴的玻尔兹曼输运方程的确定性解算器的最新进展进行了综述,并通过两个新示例证明了确定性解算器的功能:THz SiGe HBT和量子阱PMOSFET。与标准方法(蒙特卡罗方法)相比,这些确定性求解器具有某些优点。它们产生精确的固定解,并且允许直接在0到THz的频率范围内进行小信号和噪声分析。包含磁场,保利原理或罕见事件不会造成任何问题。因此,现在可以根据玻尔兹曼输运方程计算设备的某些关键品质因数,而以前这是非常困难的或根本不可能实现的。另一方面,与蒙特卡洛方法相比,确定性求解器占用更多的内存,并且编码难度更大。

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