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首页> 外文期刊>Solid-State Electronics >Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
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Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques

机译：采用干法去除技术以氧化物氧化物形貌控制的新方法进行大体积FinFET制造

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摘要

This work presents a process to fabricate Bulk FinFETs with advancements in critical fabrication steps such as the shallow trench oxide recess and the adjustment of the fin height. These steps are accomplished with the adoption of Siconi™ Selective Material Removal (SMR™) in the fabrication flow. FinFETs obtained with this new integration scheme were tested in a co-fabrication process flow proposed to integrate planar CMOS and Bulk FinFETs on the same wafer. Morphological and electrical results indicate perfectly filled trenches, a better fin height control and a Bulk FinFET static performance similar to planar CMOS. The 20 nm wide fins are fabricated using 193 nm illumination lithography followed by a series of trimming steps during the trench etching, the filling and a fin re-oxidation during the steam densifi-cation of the trench filling oxide. Trench depth is 300 nm and the electrically active fin height is 40 nm.
机译：这项工作提出了一种制造块状FinFET的工艺，该工艺在关键的制造步骤（例如浅沟槽氧化物凹槽和鳍片高度的调整）方面取得了进步。通过在制造流程中采用Siconi™选择性材料去除（SMR™）来完成这些步骤。用这种新的集成方案获得的FinFET在共同制造工艺流程中进行了测试，该工艺流程旨在将平面CMOS和体FinFET集成在同一晶片上。形态和电学结果表明，沟槽完美填充，鳍片高度控制效果更好，Bulk FinFET静态性能类似于平面CMOS。使用193 nm照明光刻技术制造20 nm宽的鳍片，然后在沟槽蚀刻，填充和在沟槽填充氧化物的蒸汽致密化过程中鳍片再氧化过程中进行一系列修整步骤。沟槽深度为300 nm，电活性鳍片高度为40 nm。

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  • 来源
    《Solid-State Electronics》 |2012年第2012期|p.106-112|共7页
  • 作者

    A. Redolfi; S. Kubicek; R. Rooyackers; M.-S. Kim; E. Sleeckx; K. Devriendt; D. Shamiryan; T. Vandeweyer; T. Delande; N. Horiguchi; M. Togo; J.M.D. Wouters; M. Jurczak; T. Hoffmann; A. Cockburn; V. Gravey; D.L. Diehl;

  • 作者单位

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    imec Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    Applied Materials Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    Applied Materials Belgium, Kapeldreef 75, 3001 Leuven, Belgium;

    Applied Materials, 974 E. Arques Ave., Sunnyvale, CA 94085, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    FinFET; bulk FinFET; BFFT; STI; field recess; siconi; co-fabrication; co-integration;

    机译：FinFET;体FinFET;BFFT;STI;野外休息西尼联合制造协整;

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