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首页> 外文期刊>Solid-State Electronics >Numerical analysis of an optoelectronic integrated device composed of coupled periodic MQW phototransistor and strained-QW laser diode
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Numerical analysis of an optoelectronic integrated device composed of coupled periodic MQW phototransistor and strained-QW laser diode

机译：耦合的周期性MQW光电晶体管和应变QW激光二极管组成的光电集成器件的数值分析

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摘要

A rigorous numerical analysis for dynamic response of a voltage-tunable optoelectronic integrated device is presented. The device is composed of a coupled periodic multi quantum wells heterojunction phototransistor (CP-MQW HPT) integrated over a strained quantum well laser diode. The model is based on small signal analysis of device rate equations, for which we require to calculate laser diode gain and HPT electro-absorption coefficient. The Hamiltonian of quantum well laser diode structure is numerically solved by transfer matrix method taking in to account the strain effect and band mixing between heavy hole and light hole. The results are used to obtain laser diode gain. In order to calculate the electroabsorption coefficient, the exciton equation is solved numerically in momentum space using combination of the Transfer matrix method and Gaussian quadrature method. The valence band mixing is also considered here. The quantum confined Stark effect in the absorption spectra results in changes in the optical gain of the device which provides voltage tunability for the device. Based on the model, we show that the device has two operation modes: amplification for small optical feedback coefficient and switching for higher values.
机译：提出了电压可调光电集成器件动态响应的严格数值分析。该器件由集成在应变量子阱激光二极管上的耦合周期性多量子阱异质结光电晶体管（CP-MQW HPT）组成。该模型基于器件速率方程的小信号分析，为此，我们需要计算激光二极管增益和HPT电吸收系数。考虑转移效应和重孔与轻孔之间的能带混合，通过转移矩阵法对量子阱激光二极管结构的哈密顿量进行了数值求解。结果用于获得激光二极管增益。为了计算电吸收系数，使用转移矩阵法和高斯积分法相结合，在动量空间中对激子方程进行数值求解。在此也考虑了价带混合。吸收光谱中的量子限制的斯塔克效应导致器件的光学增益变化，从而为器件提供电压可调性。根据该模型，我们表明该器件具有两种工作模式：放大以减小光反馈系数，而开关则需要较高的值。

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