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首页> 外文期刊>Solid-State Electronics >Observation of negative capacitance in a-SiC:H/a-Si:H UV photodetectors
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Observation of negative capacitance in a-SiC:H/a-Si:H UV photodetectors

机译：观察a-SiC：H / a-Si：H紫外线光电探测器中的负电容

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摘要

UV photosensors based on a-Si:H/a-SiC:H were deposited by ultra high vacuum plasma enhanced chemical vapour deposition system (UHV-PECVD) over a large area (10 cm x 10 cm) in p-i-n configuration. The devices were characterized in the spectrum range 200-800 nm. They showed a good sensitivity in the UV range and a rejection of visible light. A relation was found between spectral response and the thickness of p- and i-layers. A linear dependence of the photocurrent as a function of photon flux at constant wavelength (365 nm) was found. The electrical properties were correlated with the deposition conditions. Negative values of capacity at high frequency were also found in all devices. These values appear at different critic frequencies and correspond to the maximum of the device conductance. The ability to obtain regular capacitive shifts simply by reversing the signal may open research for novel devices and applications.
机译：通过超高真空等离子体增强化学气相沉积系统（UHV-PECVD）在p-i-n构造的大面积（10 cm x 10 cm）上沉积基于a-Si：H / a-SiC：H的UV光电传感器。器件的光谱范围为200-800 nm。它们在紫外线范围内显示出良好的灵敏度，并拒绝可见光。发现光谱响应与p层和i层的厚度之间存在关系。发现在恒定波长（365 nm）下，光电流与光子通量的线性关系。电性能与沉积条件相关。在所有设备中，高频电容的负值也都被发现。这些值以不同的批评者频率出现，并对应于器件电导的最大值。简单地通过反转信号来获得规则的电容位移的能力可能会为新颖的设备和应用打开研究之门。

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