LDMOS in SOI technology with very-thin silicon film

M. Bawedin; C. Renaux; D. Flandre

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LDMOS in SOI technology with very-thin silicon film

机译：采用超薄硅膜的SOI技术中的LDMOS

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摘要

In this paper, we extensively investigate, by two-dimensional simulations, the output characteristics accuracy and breakdown voltage performance for very-thin film (80 nm) SOI lateral double-diffused MOS (LDMOS) transistor as a function of the drift doping, drift length and field plate length. Trade-offs are discussed to optimize the off-state breakdown voltage versus the occurrence of kink effect and quasi-saturation in on-state. The conclusions are supported by experimental results.

机译：在本文中，我们通过二维仿真广泛研究了超薄膜（80 nm）SOI横向双扩散MOS（LDMOS）晶体管的输出特性精度和击穿电压性能与漂移掺杂，漂移的关系。长度和场板长度。讨论了折衷方案，以优化关态击穿电压与导通状态下扭结效应和准饱和的发生之间的关系。结论得到了实验结果的支持。

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来源
《Solid-State Electronics》 |2004年第12期|p.2263-2270|共8页
作者
M. Bawedin; C. Renaux; D. Flandre;
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作者单位

Microelectronics Laboratory, Universite catholique de Louvain (UCL), Place du Levant 3, B-1348 Louvain-La-Neuve, Belgium;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
关键词
kink effect; quasi-saturation; lateral double-diffused MOS transistor; very-thin silicon film; silicon-on-insulator;

机译：扭结效应;准饱和;横向双扩散MOS晶体管;超薄硅膜;绝缘体上硅;

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专利

1. 300-V class power n-channel LDMOS transistor implemented in 0.18-mu m silicon-on-insulator (SOI) technology [J] . Zhang Shuai, Tuan Hsiao-Chin, Wu Xiao-Jing, Microelectronics & Reliability . 2016,第JUNa期

机译：采用0.18μm绝缘体上硅（SOI）技术实现的300V级功率n沟道LDMOS晶体管
2. A high performance RF LDMOSFET in thin film SOI technology with step drift profile [J] . J. Luo, G. Cao, S.N. Ekkanath Madathil, Solid-State Electronics . 2003,第11期

机译：薄膜SOI技术中的高性能RF LDMOSFET，具有阶跃漂移曲线
3. Thin silicon layer p-channel SOI/PSOI LDMOS with interface n~+-islands for high voltage application [J] . Shengdong Hu, Zhi Zhu, Xinghe Wu, Superlattices and microstructures . 2014,第mara期

机译：具有接口n〜+ -island的薄硅层p沟道SOI / PSOI LDMOS，适用于高压应用
4. Approach to the silicon limit: Advanced NLDMOS in 0.13 #x03BC;m SOI technology for automotive and industrial applications up to 110V [C] . Yang Hongning, Zuo Jiangkai, Zhang Zhihong, International Symposium on Power Semiconductor Devices and ICs . 2013

机译：达到硅极限的方法：采用0.13μmSOI技术的先进NLDMOS，适用于高达110V的汽车和工业应用
5. Physics and technology development of single-crystal thin-film silicon-on-insulator (TFSOI) CMOS integrated circuits [D] . Velo, Lino Antonio 1991

机译：单晶薄膜绝缘体上硅（TFSOI）CMOS集成电路的物理和技术发展
6. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices [O] . Ana Luz Muñoz-Rosas, Arturo Rodríguez-Gómez, Juan Carlos Alonso-Huitrón 2018

机译：嵌入氮化硅薄膜中的硅量子点与金纳米粒子在发光器件中的耦合增强了电致发光
7. Experimental Comparison of RF Power LDMOSFETs on Thin-Film SOI and Bulk Silicon [O] . James G. Fiorenza, Jesús A. Del Alamo, Senior Member 2008

机译：RF功率LDmOsFET在薄膜sOI和体硅上的实验比较
8. Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI (Silicon on Insulator) Films [R] . Tsaur, B. Y., Sferrino, V. J., Choi, H. K ., 1986

机译：用sOI（绝缘体上硅）薄膜制造的抗辐射JFET器件和CmOs电路

LDMOS in SOI technology with very-thin silicon film

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