A compact deep-submicron MOSFET g_(ds) model including hot-electron and thermoelectric effects

X. Zhou; S.B. Chiah; K.Y. Lim

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A compact deep-submicron MOSFET g_(ds) model including hot-electron and thermoelectric effects

机译：紧凑的深亚微米MOSFET g_（ds）模型，包括热电子效应和热电效应

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摘要

A compact I_(ds) model with physical drain-conductance (g_(ds)) modeling for deep-submicron MOSFETs is formulated based on first-principle momentum-/energy-balance equations, which simultaneously includes the hot-electron and thermoelectric effects in a unified compact form with two fitting parameters and one-step extraction. The model has been verified with 0.18-μm experimental data with good g_(ds) prediction.

机译：基于第一原理动量/能量平衡方程式，建立了用于深亚微米MOSFET的具有物理漏极电导（g_（ds））建模的紧凑型I_（ds）模型，该方程同时包含了热电子效应和热电效应。具有两个拟合参数和一步提取的统一紧凑形式。该模型已用具有良好g_（ds）预测的0.18-μm实验数据进行了验证。

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来源
《Solid-State Electronics》 |2004年第12期|p.2125-2131|共7页
作者
X. Zhou; S.B. Chiah; K.Y. Lim;
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作者单位

School of Electrical and Electronic Engineering, Nanyang Technological University, South Spine, Block S1, 50 Nanyang Avenue, Singapore 639798, Singapore;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
关键词
drain conductance; compact model; MOSFET; velocity overshoot; thermoelectric effect;

机译：漏极电导;紧凑模型;MOSFET;速度过冲;热电效应;

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1. Compact Modeling of Partially Depleted Silicon-on-Insulator Drain-Extended MOSFET (DEMOSFET) Including High-Voltage and Floating-Body Effects [J] . Agarwal T. K., Trivedi A. R., Subramanian V., Electron Devices, IEEE Transactions on . 2011,第10期

机译：包括高压和浮体效应的部分耗尽型绝缘体上硅漏极扩展MOSFET（DEMOSFET）的紧凑模型
2. Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects [J] . Munteanu D, Autran JL, Loussier X, Molecular simulation . 2007,第7期

机译：对称双栅极MOSFET的紧凑模型，包括载流子限制和短沟道效应
3. A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs) [J] . Samy Omnia, Abdelhamid Hamdy, Ismail Yehea, Microelectronics & Reliability . 2016,第deca期

机译：适用于轻掺杂DG MOSFET（P-DGFET）的2D紧凑模型，包括负偏置温度不稳定性（NBTI）和短沟道效应（SCE）
4. A compact deep-submicron MOSFET g/sub ds/ model including hot-electron and thermoelectric effects [C] . Zhou, X., Chiah, . 2001

机译：紧凑的深亚微米MOSFET g / sub ds /模型，包括热电子和热电效应
5. Process-based compact modeling and analysis of silicon-on-insulator CMOS devices and circuits, including double-gate MOSFETs. [D] . Chiang, Meng-Hsueh. 2001

机译：对绝缘体上硅CMOS器件和电路（包括双栅MOSFET）的基于过程的紧凑建模和分析。
6. Hot-electron effects during reactive scattering of H2 from Ag(111): the interplay between mode-specific electronic friction and the potential energy landscape [O] . Yaolong Zhang, Reinhard J. Maurer, Hua Guo, 2019

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7. Compact Modeling of Symmetrical Double-Gate MOSFETs Including Carrier Confinement and Short-Channel Effects [O] . Munteanu Daniela, Autran Jean Luc, Loussier Xavier, 2009

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8. Towards Modeling the Effects of Lightning Injection on Power MOSFETs. [R] . B. Saha J. R. Celaya K. F. Goebel P. Wysocki S. Saha 2010

机译：建模雷电注入对功率mOsFET的影响。

A compact deep-submicron MOSFET g_(ds) model including hot-electron and thermoelectric effects

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