High resolution transport spectroscopy in ultimate MOSFETs at very low temperature

M. Sanquer; X. Jehl; M. Specht; G. Bertrand; G. Guegan; S. Deleonibus

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High resolution transport spectroscopy in ultimate MOSFETs at very low temperature

机译：极低温度下最终MOSFET中的高分辨率传输光谱

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To analyse electrostatic disorder in doped sub-100 nm Si-MOSFET channels we investigate the sub-threshold regime by transport spectroscopy at very low temperature. We measure resonances in the differential drain current and analyse their distribution in gate voltage, which is found to be gaussian. The mean value is interpreted as the electrostatic charging energy associated to a local well in the surface potential, whose dimensions is comparable to the channel length. The channel dopants concentration does not affect significantly this result.

机译：为了分析掺杂的100 nm以下Si-MOSFET沟道中的静电无序，我们通过非常低的温度下的传输光谱研究了亚阈值范围。我们测量了差分漏极电流中的谐振，并分析了它们在栅极电压中的分布，发现栅极电压是高斯分布。平均值被解释为与表面电势中的局部阱相关的静电电荷能量，其尺寸与沟道长度相当。沟道掺杂剂浓度不会明显影响该结果。

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来源
《Solid-State Electronics》 |2004年第12期|p.2213-2217|共5页
作者
M. Sanquer; X. Jehl; M. Specht; G. Bertrand; G. Guegan; S. Deleonibus;
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作者单位

CEA-DSM-DRFMC-SPSMS, CEA-Grenoble, 17 Rue Des Martyrs, 38054 Grenoble Cedex 9, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
关键词
coulomb blockade; single-electron tunneling; field effect devices; semiconductor-device characterization; design; and modeling;

机译：库仑阻挡;单电子隧穿;场效应器件;半导体器件表征;设计;和建模;

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专利

1. Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETs [J] . L.E. Calvet, G.A.Meshkov, E.Strupiechonski, Physica, B. Condensed Matter . 2009,第23a24期

机译：使用肖特基势垒MOSFET的缺陷的低温传输光谱
2. Random telegraph noise in ultimate MOSFETs at very low temperature in the subthreshold regime [J] . X. Jehl, M. Sanquer, G. Bertrand, Journal de Physique, IV: Proceedings of International Conference . 2002,第3期

机译：亚阈值状态下极低温度下最终MOSFET中的随机电报噪声
3. Low frequency noise versus temperature spectroscopy of Ge JFETs, Si JFETs and Si MOSFETs [J] . D. V. Camin, C. F. Colombo, V. Grassi Journal de Physique, IV: Proceedings of International Conference . 2002,第3期

机译：Ge JFET，Si JFET和Si MOSFET的低频噪声与温度光谱
4. Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETs [C] . L.E. Calvet, G.A. Meshkov, E. Strupiechonski, Physica B: Condensed matter . 2009

机译：使用肖特基势垒MOSFET的缺陷的低温传输光谱
5. Effects of low-temperature operation on the performance of MOSFETs. [D] . Kathuria, Achal. 2010

机译：低温工作对MOSFET性能的影响。
6. Resolution and characterization of chemical steps in enzyme catalytic sequences by using low temperature and time-resolved full-spectrum EPR spectroscopy in fluid cryosolvent and frozen solution systems [O] . Miao Wang, Chen Zhu, Meghan M. Kohne, -1

机译：在流体冷冻溶剂和冷冻溶液系统中使用低温和时间分辨的全光谱EPR光谱解析和表征酶催化序列中的化学步骤
7. Comparison of advanced transport models for nanoscale MOSFETs, 10th International Conference on Ultimate Integration of Silicon [O] . P. PALESTRI, C. ALEXANDER, A. ASENOV, 2009

机译：第十届硅最终集成国际会议，纳米级MOSFET的先进传输模型比较

High resolution transport spectroscopy in ultimate MOSFETs at very low temperature

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