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首页> 外文期刊>Solid-State Electronics >Monitoring the non-parabolicity of the conduction band in GaN_(0.018)As_(0.982)/GaAs quantum wells
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Monitoring the non-parabolicity of the conduction band in GaN_(0.018)As_(0.982)/GaAs quantum wells

机译：监测GaN_（0.018）As_（0.982）/ GaAs量子阱中导带的非抛物线性

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摘要

Dramatic changes of the electronic band structure occur when incorporating even a small fraction of N into GaAs. One important consequence of the N-incorporation is a strong non-parabolicity of the conduction band of GaN_xAs_(1-x) yielding already for x less than 1% a considerable increase in the electron effective mass and a strong variation of the electron effective mass with increasing k-vector. We demonstrate how this N-induced non-parabolic dispersion of the conduction band in Ga(N,As) can be determined by a careful analysis of the interband transitions of Ga(N,As)-based quantum wells as a function of hydrostatic pressure. A series of GaN_(0.018)As_(0.982)/GaAs wells of various widths was studied by photomodulated reflectance (PR) at 300 K and hydrostatic pressures up to 20 kbar. The PR spectra were fitted using derivative-like line shapes to extract the energy positions of the interband transitions. The transition energies were compared with theoretical values calculated using a 10-band k.p-model including the effects of nitrogen. The good agreement between experiment and theory allows one to extract the valence band offset as well as the conduction band dispersion and hence the change of the effective mass with pressure and energy.
机译：当将很小一部分N掺入GaAs时，电子能带结构就会发生剧烈变化。 N掺入的一个重要结果是GaN_xAs_（1-x）的导带的强非抛物线性，对于x而言，已经产生了小于1％的电子有效质量的显着增加和电子有效质量的强烈变化随着k向量的增加我们展示了如何通过仔细分析基于Ga（N，As）的量子阱的带间跃迁作为静水压力的函数来确定Ga（N，As）的N诱导导带的非抛物线色散。通过在300 K和高达20 kbar的静水压力下的光调制反射率（PR）研究了一系列不同宽度的GaN_（0.018）As_（0.982）/ GaAs阱。使用类似导数的线形拟合PR光谱，以提取带间跃迁的能量位置。将跃迁能与使用包括氮的影响的10波段k.p模型计算的理论值进行比较。实验和理论之间的良好一致性允许人们提取价带偏移以及导带色散，从而提取有效质量随压力和能量的变化。

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