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Microscopic theory of gain and spontaneous emission in GaInNAs laser material

机译：GaInNAs激光材料增益和自发发射的微观理论

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摘要

A fully microscopic model is used to calculate absorption/gain and spontaneous emission for GaInNAs quantum-well laser gain media. It is demonstrated how this approach can be used to derive the optical properties for the regime of semiconductor laser operation from low density photo luminescence spectra which can be obtained from simple experiments. Numerical results are presented showing that increased well depth leads to strongly increased differential gains and gain amplitudes and pronounced shifts of the gain maximum with increasing density. On the basis of a quantum Blotzmann model for the incoherent carrier dynamics it is shown, that high carrier confinement can lead to unusually long carrier capture times. Furthermore, temperature dependent bandstructure parameters for GaInNAs for the applied 10-band k·p-model are presented that have been derived from comparison to recent experimental data.
机译：完整的微观模型用于计算GaInNAs量子阱激光增益介质的吸收/增益和自发发射。演示了如何使用此方法从低密度光致发光光谱中得出半导体激光器工作状态的光学特性，该光谱可以从简单的实验中获得。数值结果表明，增加井深会导致差分增益和增益幅度大大增加，并且随着密度的增加，增益最大值也会发生明显变化。根据用于非相干载流子动力学的量子Blotzmann模型，可以看出，高载流子限制会导致异常长的载流子捕获时间。此外，提出了GaInNAs的温度相关能带结构参数，该参数适用于所应用的10波段k·p模型，该参数是通过与最新实验数据进行比较得出的。

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