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首页> 外文期刊>Solid-State Electronics >LO phonon-plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys
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LO phonon-plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys

机译：GaAsN合金的拉曼光谱中LO声子-等离激元耦合和机械无序诱发效应

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Mechanical and chemical disorders are investigated in GaAsN alloys with N content close to the solubility limit, ～2-3%. One attractive characteristic, yet unexplored, of N-based Ⅲ-Ⅴ ternary alloys is that they consist in mixed crystals with a sharp contrast in the bulk modulus of the two constituents. Raman scattering is well-suited for its investigation because it addresses the force constant of the bond, which depends on the mechanical properties of the host matrix. In the Ga-N region, we observe a mode at 425 cm~(-1), i.e. below the local mode of N in GaAs at 470 cm~(-1). This mode has degenerated LO and TO components and seems to grow at fixed frequency with N content. From a direct comparison with Zn-Be chalcogenides, which exhibit a similar mechanical contrast, it is attributed to GaN vibrations in hard-like N-rich bounded regions, dispersed within the soft-like Ga-rich matrix. In the GaAs region we use Si-doping as a sensitive probe to investigate the structural quality close to the solubility limit. At low N content (n≥10~(18) cm~(-3)), we observe similar LO phonon-plasmon (LOP) coupling as in GaAs:Si. Unexpectedly LOP coupling is disorder-cancelled at higher N contents while the pure LO and disorder-activated theoretically forbidden TO modes substitute for it. Disorder-induced red-side LO asymmetries are fairly accounted for by the spatial correlation model with Gaussian distribution and the fitted value of correlation length is a quantitative indication for the disorder rate.
机译：在Ga含量接近于溶解度极限2-3％的GaAsN合金中，研究了机械和化学异常。 N基Ⅲ-Ⅴ三元合金的一个吸引人的特性（尚未探索）是它们包含在混合晶体中，这两种成分的体积模量具有鲜明的对比。拉曼散射非常适合其研究，因为它可以解决键的力常数，该常数取决于基质的机械性能。在Ga-N区域中，我们观察到425 cm〜（-1）处的模式，即低于GaAs中470 cm〜（-1）处的N的局部模式。该模式具有退化的LO和TO分量，并且似乎在固定频率下以N含量增长。与具有相似机械对比度的Zn-Be硫族化物直接比较，这归因于GaN振动在硬类富N的受限区域（分散在软类富Ga的基质中）中。在GaAs区域中，我们使用Si掺杂作为敏感探针来研究接近溶解度极限的结构质量。在低氮含量（n≥10〜（18）cm〜（-3））下，我们观察到与GaAs：Si中相似的LO声子-等离子体激元（LOP）耦合。出乎意料的是，在较高的N含量下，LOP耦合会被无序消除，而理论上被纯LO和无序激活的TO模式替代了它。具有高斯分布的空间相关模型可以合理地解决由疾病引起的红边LO不对称性，相关长度的拟合值是无序率的定量指标。

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