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Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs

机译：氮掺入增加对GaInNAs / GaAs生长的影响

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摘要

In situ reflection anisotropy spectroscopy (RAS) during GaAs(001) surface nitridation and the chemical beam epitaxy growth of GaInNAs/GaAs(001) films containing variable levels of N, is correlated with post-deposition scanning transmission electron microscope (STEM) energy dispersive X-ray chemical composition analysis from cross-section samples. For low N fluxes, below the solubility limit of N in InGaAs, InGaAsN behaves much the same as InGaAs during growth. However for higher N fluxes, during the growth of InGaAsN/GaAs the RAS shows the surface permanently loses its ability to form an As-dimer reconstructed surface, and bulk optical anisotropy of the order 1% develops. Post-deposition STEM from cross-sections shows that the low-N InGaAsN films are initially homogeneous and of uniform thickness, whereas the high-N InGaAsN films grow with a segregated microstructure containing InGaAs(N) and GaN-like phases. The segregated microstructure is anisotropic along the [110] and [-110] directions, which explains the observed RAS bulk optical anisotropy. Any nitridation of the GaAs by the N-atom flux prior to growth promotes the growth of islands rather than smooth homogeneous films of InGaAsN.
机译：GaAs（001）表面氮化过程中的原位反射各向异性光谱（RAS）和含有可变水平N的GaInNAs / GaAs（001）膜的化学束外延生长与沉积后扫描透射电子显微镜（STEM）能量色散相关横截面样品的X射线化学成分分析。对于低N通量，低于InGaAs中N的溶解度极限，InGaAsN在生长期间的行为与InGaAs相同。但是，对于更高的N通量，在InGaAsN / GaAs的生长过程中，RAS显示该表面永久失去了形成As-二聚体重构表面的能力，并且形成了大约1％的体光学各向异性。从横截面的沉积后STEM表明，低N InGaAsN膜最初是均匀的并且具有均匀的厚度，而高N InGaAsN膜的​​生长具有包含InGaAs（N）和GaN类相的分离的微观结构。偏析的微观结构沿[110]和[-110]方向是各向异性的，这解释了观察到的RAS本体光学各向异性。生长前N原子通量对GaAs进行的任何氮化都会促进岛的生长，而不是平滑的InGaAsN均匀薄膜。

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