Pulsed laser deposition of manganese doped GaN thin films

D. OMahony; J.G. Lunney; G. Tobin; E. McGlynn

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Pulsed laser deposition of manganese doped GaN thin films

机译：脉冲激光沉积锰掺杂的GaN薄膜

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Thin films of GaN doped with manganese were grown on sapphire substrates by pulsed laser deposition. The deposition plasma was characterised using a Langmuir ion probe and the film growth process was monitored in situ using optical reflectometry. The films showed higher Mn concentrations than the target preparations, suggesting a loss of gallium during the growth process. Photoluminescence measurements carried out on pure and doped films showed a quenching of the blue-green luminescence with the inclusion of manganese.

机译：通过脉冲激光沉积在蓝宝石衬底上生长掺杂有锰的GaN薄膜。使用Langmuir离子探针对沉积等离子体进行表征，并使用光学反射仪对膜生长过程进行原位监测。该膜显示出比目标制剂更高的Mn浓度，表明在生长过程中镓的损失。在纯净膜和掺杂膜上进行的光致发光测量表明，蓝光和绿光的猝灭伴随着锰的加入。

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来源
《Solid-State Electronics》 |2003年第3期|p.533-537|共5页
作者
D. OMahony; J.G. Lunney; G. Tobin; E. McGlynn;
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作者单位

Department of Physics, Trinity College Dublin, Dublin 2, Ireland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
关键词
dilute magnetic semiconductor; GaMnN; PLD; nitride;

机译：稀磁半导体GaMnN PLD氮化物;

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Pulsed laser deposition of manganese doped GaN thin films

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