Influence of preparation parameters for low-energy ion beam nitridation of Ⅲ-Ⅴ semiconductor surfaces

J.-D. Hecht; F. Frost; A. Sidorenko; D. Hirsch; H. Neumann; A. Schindler; S. Krasnikow; L. Zhang; T. Chasse

首页> 外文期刊>Solid-State Electronics >Influence of preparation parameters for low-energy ion beam nitridation of Ⅲ-Ⅴ semiconductor surfaces

【24h】

Influence of preparation parameters for low-energy ion beam nitridation of Ⅲ-Ⅴ semiconductor surfaces

机译：制备参数对Ⅲ-Ⅴ族半导体表面低能离子束氮化的影响

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The nitridation of InAs, InP, and InSb by low-energy N_2~+ ion bombardment at different preparation parameters was studied by near-edge X-ray absorption fine structure, photoemission spectroscopy (PES), and resonant PES measurements. The investigated surface nitride layers mainly consist of compounds with In-N, V-N bonds and interstitial nitrogen (N_i). The final remaining nitride layer composition strongly depends on the chosen preparation parameters. The nitridation affect composition and annealing temperature offers several opportunities to affect defect curing by ordering and removing oxinitrides, N-O bonds and N_i from nitrided surfaces.

机译：通过近缘X射线吸收精细结构，光电子能谱（PES）和共振PES测量，研究了低能N_2〜+离子轰击在不同制备参数下对InAs，InP和InSb的氮化作用。研究的表面氮化物层主要由具有In-N，V-N键和间隙氮（N_i）的化合物组成。最终剩余的氮化物层组成在很大程度上取决于所选的制备参数。氮化影响成分和退火温度通过有序化和从氮化表面去除氧氮化物，N-O键和N_i提供了几种影响缺陷固化的机会。

著录项

来源
《Solid-State Electronics》 |2003年第3期|p.413-418|共6页
作者
J.-D. Hecht; F. Frost; A. Sidorenko; D. Hirsch; H. Neumann; A. Schindler; S. Krasnikow; L. Zhang; T. Chasse;
展开▼
作者单位

Institut fuer Oberflaechenmodifizierung e. V., Permoserstrasse 15, D-04318 Leipzig, Germany;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
关键词

相似文献

外文文献
中文文献
专利

1. Low-energy electron beam induced dissociation of methyl groups chemisorbed on semiconductor surfaces: (CH3)(3)Al adsorbed on GaAs and InSb [J] . Mulcahy CPA., Jones TS., Eggeling J. Chemical Physics Letters . 1998,第2a4期

机译：低能电子束诱导的化学吸附在半导体表面的甲基解离：（CH3）（3）Al吸附在GaAs和InSb上
2. Importance of ion beam parameters on self-organized pattern formation on semiconductor surfaces by ion beam erosion [J] . B. Ziberi, F. Frost, M. Tartz, Thin Solid Films . 2004,第1a2期

机译：离子束参数对通过离子束腐蚀在半导体表面上自组织图形形成的重要性
3. Optical emission spectroscopy study of the influence of the low-energy electron beam parameters on the content of neutral atomic nitrogen in the beam plasma [J] . A I Menshakov, Yu S Surkov, V I Solomonov, Journal of Physics: Conference Series . 2018,第3期

机译：低能电子束参数对电子束等离子体中性原子氮含量的影响的光发射光谱研究
4. Low-Energy Ion Technique for Semiconductor Surface Preparation [C] . S.N. Chebotarev, V.A. Irkha, Adnan A.A. Mohamed International conference on industrial engineering . 2018

机译：用于半导体表面处理的低能离子技术
5. Fluorocarbon thin-film deposition on polymer surfaces from low-energy polyatomic ion beams. [D] . Wijesundara, Muthu Bandage Jayathilaka. 2001

机译：低能多原子离子束在聚合物表面沉积碳氟化合物薄膜。
6. Influence of scanning and reconstruction parameters on quality of three-dimensional surface models of the dental arches from cone beam computed tomography [O] . Bassam Hassan, Paulo Couto Souza, Reinhilde Jacobs, -1

机译：扫描和重建参数对锥束计算机断层扫描的牙弓三维表面模型质量的影响
7. Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation [O] . Moreno-Barrado Ana, Castro Mario, Gago Raúl, 2015

机译：通过低能量离子束照射纳米图案的半导体表面上，由于不均匀的应力Nonuniversality

Influence of preparation parameters for low-energy ion beam nitridation of Ⅲ-Ⅴ semiconductor surfaces

摘要

著录项

相似文献

相关主题

期刊订阅