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Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well

机译：GaInNAs / GaAs量子阱生长和退火的中能离子散射研究

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The post-growth thermal annealing of GaInNAs quantum well (QW) based lasers has been widely employed to optimise the desired laser emission wavelength and efficiency although the mechanism for this process is uncertain. A number of factors have been implicated including the inter-diffusion of gallium and indium atoms; reduction of non-radiative centres; and the enhanced incorporation of nitrogen atoms into the GaInNAs lattice structure. This paper investigates the distribution of indium within as-grown and annealed GaInNAs QW's characterised by medium energy ion scattering. Comparison of the channelled and randomly scattered Ga and In atomic distributions indicates the aggregation of indium in the as-grown QW's occurs on the nanoscale. After annealing at temperatures up to 600℃ the indium concentration in the <100> blocking dips is decreased and the strain in the QW is marginally increased. At 640℃ surface degradation is observed in the sample and the GaInNAs QW decomposes.
机译：GaInNAs基于量子阱（QW）的激光器的生长后热退火已被广泛用于优化所需的激光发射波长和效率，尽管该过程的机理尚不确定。牵涉到许多因素，包括镓和铟原子的相互扩散；减少非辐射中心；以及氮原子向GaInNAs晶格结构中结合的增强。本文研究了以中等能量离子散射为特征的GaInNAs QW生长退火后的铟中的分布。通道分布和随机分布的Ga和In原子分布的比较表明，生长的QW中铟的聚集发生在纳米级。在最高600℃的温度下退火后，<100>阻挡层中的铟浓度降低，QW中的应变略有增加。在640℃，样品中观察到表面降解，并且GaInNAs QW分解。

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