...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Solid-State Electronics >Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN_(1-x)P_x SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition
【24h】

Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN_(1-x)P_x SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition

机译：激光辅助金属有机化学气相沉积生长的富氮化物GaN_（1-x）P_x SQW结构LED在正向和反向偏置条件下的电致发光研究

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have fabricated a nitride-rich GaN_(1-x)P_x single quantum well structure by laser-assisted metal-organic chemical vapor deposition. In the forward bias condition, the electroluminescence of the LED had two main peaks, of which the energy positions around 2.9 eV were called the blue-band and that around 2.2 eV were called the yellow-band. Further, the LED emitted in the yellow-band even during a reverse-bias condition. The peak energy of these emissions shifted toward higher energy as the drive current increased. The blue-band shift of increasing current may be explained by a band-filling mechanism, as reported for TnGaN LEDs. The Ⅰ-Ⅴ characteristics of the LED are not very similar to those of the conventional InGaN LED. The component of current flow consists of an ohmic ingredient and an exponential ingredient. The equivalent ideal factor (n) of this LED is over 200; also in the reverse bias region, the Ⅰ-Ⅴ curve has good linearity rather than an exponential component. These results suggest that blue-band emission relates to the exponential ingredient and the yellow-band emission relates to the ohmic ingredient.
机译：我们通过激光辅助金属有机化学气相沉积法制备了富氮化物的GaN_（1-x）P_x单量子阱结构。在正向偏置条件下，LED的电致发光具有两个主峰，其中约2.9 eV的能量位置称为蓝带，而约2.2 eV的能量位置称为黄带。此外，即使在反向偏置条件下，LED仍以黄带发射。随着驱动电流的增加，这些排放的峰值能量转向更高的能量。如针对TnGaN LED报道的那样，电流增加的蓝带偏移可以通过带填充机制来解释。 LED的Ⅰ-Ⅴ特性与常规InGaN LED不太相似。电流的组成部分由欧姆成分和指数成分组成。该LED的等效理想因数（n）超过200。同样在反向偏置区域，Ⅰ-Ⅴ曲线具有良好的线性，而不是指数成分。这些结果表明，蓝带发射与指数成分有关，而黄带发射与欧姆成分有关。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号