Bias temperature instability mechanisms

CHRISTOPHER L. HENDERSON; DAVID W. ROSE

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Bias temperature instability mechanisms

机译：偏置温度不稳定性机制

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Researchers agree on several aspects of NBTI. NBTI is a hole catalyzed reaction that has a pronounced effect on p-channel transistors, and is quite difficult to reduce or eliminate, particularly in devices with short channel lengths. NBTI field dependence is due to the reaction phase, not a field drift component. The damage increases the threshold voltage shift. Interface traps are certainly involved, but there may be another component such as fixed charge as well.

机译：研究人员在NBTI的几个方面达成了共识。 NBTI是一种空穴催化反应，对p沟道晶体管有显着影响，而且很难减少或消除，特别是在沟道长度短的器件中。 NBTI场依赖性是由于反应阶段，而不是场漂移分量。损坏会增加阈值电压偏移。肯定会涉及到接口陷阱，但可能还会有其他成分，例如固定电荷。

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来源
《Solid state technology》 |2012年第5期|p.21-23|共3页
作者
CHRISTOPHER L. HENDERSON; DAVID W. ROSE;
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作者单位

Semitracks, Inc.;

Keithley Instruments, Inc;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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1. Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO_2 Gate Dielectrics [J] . Motoyuki Sato, Satoshi Kamiyama, Takeo Matsuki, Japanese journal of applied physics . 2010,第4issue2期

机译：正偏置温度不稳定性中的负阈值电压漂移和掺钇的HfO_2栅介质的负偏置温度不稳定性的正阈值电压漂移的研究
2. Electrical performances degradations and physics based mechanisms under negative bias temperature instability stress for p-GaN gate high electron mobility transistors [J] . Zhang Chi, Liu Siyang, Li Sheng, Semiconductor science and technology . 2021,第1期

机译：电气性能降低和基于物理学机制在P-GaN栅极高电子迁移率晶体管的负偏置温度不稳定性应力下
3. Reassessing the Mechanisms of Negative-Bias Temperature Instability by Repetitive Stress/Relaxation Experiments [J] . Device and Materials Reliability, IEEE Transactions on . 2011,第1期

机译：通过重复应力/松弛实验重新评估负偏压温度不稳的机制
4. Evaluation of mirror full adder circuit reliability performance due to negative bias temperature instability (NBTI) effects based on different defect mechanisms [C] . I. B. Shaari, M. F. Zainudin, M. S. A. Saini, Electronic and Green Materials International Conference . 2017

机译：基于不同缺陷机制的负偏置温度不稳定性（NBTI）效应，评估镜面全加法器电路可靠性性能
5. Total Ionizing Dose Radiation Effects and Negative Bias Temperature Instability on SiGe pMos Devices [D] . Duan, Guoxing. 2016

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6. Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature [O] . M. Kubicek, S. Taibl, E. Navickas, -1

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Bias temperature instability mechanisms

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