Cu contamination control for advanced interconnect manufacturing

Dieter Dornisch; Guangming Li; Maureen Brongo

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Cu contamination control for advanced interconnect manufacturing

机译：用于高级互连制造的铜污染控制

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As IC manufacturers are moving to copper metallization for their most advanced products, contamination control presents a big challenge for the back-end-of-line manufacturing processes. Copper contamination could be introduced or spread from various sources, such as copper processing tools or wafers with open copper surfaces, and might cause catastrophic effects on production. By looking into a generic copper damascene process flow, requirements for critical cleaning steps can be identified, especially for fabs with mixed conventional aluminum and copper metallization.

机译：随着IC制造商将最先进的产品转移到铜金属化方面，污染控制对后端制造工艺提出了巨大挑战。铜污染可能会从各种来源引入或扩散，例如铜加工工具或具有敞开的铜表面的晶圆，并可能对生产造成灾难性影响。通过研究通用的铜镶嵌工艺流程，可以确定关键清洁步骤的要求，特别是对于具有常规铝和铜金属混合涂层的工厂。

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《Solid state technology》 |2000年第5期|p.137-138140142145-146|共6页
作者
Dieter Dornisch; Guangming Li; Maureen Brongo;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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Cu contamination control for advanced interconnect manufacturing

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