Solid state: Molecular beam epitaxy: Streams of molecules in a vacuum chamber build devices ‘from the atom up’

Panish Morton G.; Cho Alfred Y.

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Solid state: Molecular beam epitaxy: Streams of molecules in a vacuum chamber build devices ‘from the atom up’

机译：固态：分子束外延：真空室中的分子流“从原子向上”构建装置

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After years of research, molecular beam epitaxy (MBE), a process for forming thin, single-crystal semiconductor structures in an ultrahigh vacuum, is beginning to pay dividends. Microwave field-effect transistors, semiconductor lasers, millimeter-wave detectors, and a variety of other high-performance devices have been made from the multilayer crystals grown by the process. A greater variety of devices and still higher performance can be expected.

机译：经过多年的研究，分子束外延（MBE）是一种在超高真空下形成薄的单晶半导体结构的工艺，开始受到人们的欢迎。微波场效应晶体管，半导体激光器，毫米波检测器和各种其他高性能器件已经由通过该方法生长的多层晶体制成。可以预期会有更多种类的设备和更高的性能。

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《Spectrum, IEEE》 |1980年第4期|p.18-23|共6页
作者
Panish Morton G.; Cho Alfred Y.;
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Bell Laboratories;

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1. Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system [J] . Rutkowski M.M., McNicholas K.M., Zeng Zhaoquan, Review of Scientific Instruments . 2013,第6期

机译：连接氧化物分子束外延生长室和X射线光电子能谱分析系统的超高真空传输机构的设计
2. Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination [J] . Debiossac M., Atkinson P., Zugarramurdi A., Applied Surface Science . 2017,第PTaA期

机译：分子束外延室内的快速原子衍射，丰富的组合
3. High-performance In/sub 0.53/Ga/sub 0.47/As thermophotovoltaic devices grown by solid source molecular beam epitaxy [J] . Hudait M.K., Andre C.L., Kwon O., IEEE Electron Device Letters . 2002,第12期

机译：固体源分子束外延生长的高性能In / sub 0.53 / Ga / sub 0.47 / As热光电器件
4. Low defect and high uniformity solid-source molecular beam epitaxy of InAlAs/InGaAs/InP heterostructures for optical MQW-SPSL devices [C] . Panzlaff, K., Feifel, Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on . 1996

机译：MQW-SPSL光学器件的InAlAs / InGaAs / InP异质结构的低缺陷和高均匀性固体源分子束外延
5. Growth of polar and non-polar nitride semiconductor quasi-substrates by hydride vapor phase epitaxy for the development of optoelectronic devices by molecular beam epitaxy [D] . Moldawer, Adam Lyle 2013

机译：氢化物气相外延生长极性和非极性氮化物半导体准衬底，用于分子束外延开发光电子器件
6. Surface and build‐up dose comparison between Elekta 6 MV flattening filter and flattening‐filter‐free beams using an advanced Markus ionization chamber and a solid water‐equivalent phantom [O] . Toshikazu Imae, Shigeharu Takenaka, Yuichi Watanabe, 2020

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7. Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination [O] . Debiossac, M., Atkinson, P., Zugarramurdi, A., 2017

机译：分子束外延室内的快速原子衍射，丰富的组合
8. Ohio State University Cooperative Research and Development Agreement (CRDA). Crystal Growth by Molecular Beam Epitaxy (MBE) and Characterization of Optoelectronic Devices [R] . Siskaninetz, W. J. 2003

机译：俄亥俄州立大学合作研究与开发协议（CRDa）。分子束外延（mBE）晶体生长和光电子器件表征

Solid state: Molecular beam epitaxy: Streams of molecules in a vacuum chamber build devices ‘from the atom up’

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