Comparative study of atomic-layer-deposited HfO_2/Al_2O_3, Hf_(0.8)Al_(0.2)O_x and Hf_(0.5)Al_(0.5)O_x on N-GaAs

著录项

• 来源
  《Superlattices and microstructures》 |2016年第11期|58-61|共4页
• 作者

  Xinjiang Yu; Hongliang Lv; Yuming Zhang; Yimen Zhang; Zaiyang Qin;

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• 作者单位

  School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, PR China;

  School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, PR China;

  School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, PR China;

  School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, PR China;

  School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, PR China;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Gate dielectric; Interface trap density; GaAs;

  机译：栅极电介质;界面陷阱密度;砷化镓;