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A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

机译：一种新型的具有周期性掩埋氧化物的局部SOI LDMOSFET，可提高击穿电压并增强自热效应

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In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO_2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO_2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of V_(DS) = 100V and gate-source voltage of V_(GS) = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.
机译：本文提出了一种局部绝缘体上硅（PSOI）横向双扩散金属氧化物半导体场效应晶体管（LDMOSFET），具有周期性的埋入氧化物层（PBO），以提高击穿电压（BV）和自热效应（SHE）。第一次。这种新结构称为绝缘体上的周期性掩埋氧化物部分硅（PBO-PSOI）。在这种结构中，周期性的小块SiO_2被用作PSOI中的掩埋氧化物（BOX）层，以调制结构中的电场。结果表明，通过产生额外的电场峰，电场分布更加均匀，从而降低了PBO-PSOI结构中漏极和栅极结附近的公共峰。因此，电场曲线下面的面积增加，这导致更高的击穿电压。此外，在源极侧引入了p型Si窗口，以迫使衬底共享垂直电压降，从而导致更高的垂直BV。此外，源极下方的Si窗和周期性的SiO_2之间的Si窗在有源层和衬底之间形成平行的导电路径，从而减轻了SHE。 Silvaco仿真工具套件中的二维ATLAS设备仿真器进行的仿真表明，PBO-PSOI的BV比传统的部分SOI（C-PSOI）结构的BV高100％。此外，与C-PSOI对应物相比，PBO-PSOI结构在更大程度上减轻了SHE。在V_（DS）= 100V的漏极-源极电压和V_（GS）= 25 V的栅极-源极电压下，PBO-PSOI结构实现的漏极电流（100μA）显着大于C-PSOI和完全耗尽的SOI（FD-SOI）结构（分别为87μA和51μA）。通过增加漂移区的掺杂，可以以BV为代价进一步改善漏极电流。

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