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首页> 外文期刊>Superlattices and microstructures >The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiN_x interlayers
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The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiN_x interlayers

机译：在具有SiN_x夹层的Si（111）衬底上生长的GaN外延层的电，光学和结构性质

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摘要

The effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin buffer layer of silicon nitride (SiN_x) with various thicknesses was achieved through the nitridation of the substrate at different nitridation times ranging from 0 to 660 s. The surface roughness of the GaN film, which was grown on the Si substrate 10 s, exhibited a root mean square (RMS) value of 1.12 nm for the surface roughness. However, further increments in the nitridation times in turn cause increments in the surface roughness in the GaN layers. The number of threading dislocation (TD) was counted from plan-view TEM (Transmission Electron Microscopy) images. The determined density of these threading dislocations was of the order of 9 ×10~9 cm~(-2). The sheet resistances of the GaN layers were measured. The average sheet resistance significantly increases from 2867 Ω sq~(-1) for sample A (without nitridation) to 8124 Ω sq~(-1) for sample F (with 660 s nitridation). The photoluminescence (PL) measurements of the samples nitridatedrnat various mtndation times were done at a temperature range of 10-300 K. A strong band edge PL emission line, which was centered at approx. 3.453 eV along with its phonon replicas which was separated by approx. 92 meV in successive orders, was observed at 10 K. The full width at half maximum (FWHM) of this peak is approx. 14 meV, which indicates the reasonable optical quality of the GaN epilayers grown on Si substrate. At room temperature, the peak position and FWHM of this emission became 3.396 eV and 58 meV, respectively.
机译：研究了原位衬底氮化时间对通过金属有机化学气相沉积（MOCVD）在Si（111）衬底上生长的GaN膜的电学，结构和光学性能的影响。通过在0到660 s的不同氮化时间下对基板进行氮化，可以获得厚度各异的氮化硅薄缓冲层（SiN_x）。在Si衬底10s上生长的GaN膜的表面粗糙度显示出表面粗糙度的均方根（RMS）值为1.12nm。然而，氮化时间的进一步增加又导致GaN层中表面粗糙度的增加。从平面图TEM（透射电子显微镜）图像计数穿通错位（TD）的数量。这些穿通位错的确定密度为9×10〜9 cm〜（-2）。测量了GaN层的薄层电阻。平均薄层电阻从样品A（无氮化）的2867Ωsq〜（-1）显着增加到样品F（有660 s氮化）的8124Ωsq〜（-1）。在10-300 K的温度范围内，对在不同时间进行氮化的样品的光致发光（PL）进行了测量。 3.453 eV及其声子副本之间的距离约为在10 K处观察到连续92兆电子伏特。此峰的半峰全宽（FWHM）约为。 14 meV，这表明在Si衬底上生长的GaN外延层的合理光学质量。在室温下，该发射的峰值位置和FWHM分别变为3.396 eV和58 meV。

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  • 来源
    《Superlattices and microstructures》 |2009年第6期|846-857|共12页
  • 作者

    Engin Arslan; OEzguer Duygulu; Ali Arslan Kaya; Ali Teke; Sueleyman OEzgelik; Ekmel Ozbay;

  • 作者单位

    Nanotechnology Research Center, Bilkent University, Bilkent, 06800 Ankara, Turkey;

    TUBITAK Marmara Research Center, Materials Institute, PO Box 21 Gebze Kocaeli, 41470, Kocaeli, Turkey;

    Mugla University, Engineering Faculty, Metallurgy and Materials Engineering Department, 48170 Mugla, Turkey;

    Department of Physics, Faculty of Science and Letters, Batikesir University, 10145 Balikesir, Turkey;

    Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500 Ankara, Turkey;

    Nanotechnology Research Center, Department of Physics, Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, 06800 Ankara, Turkey;

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  • 关键词

    B1.GaN; B1.SiN_x layer; A3. MOCVD; B1. silicon substrates; B1. nitridation;

    机译：B1.GaN;B1.SiN_x层;A3。 MOCVD;B1。硅基板;B1。氮化作用;

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