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首页> 外文期刊>Superlattices and microstructures >Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on Equivalent Potential Method
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Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on Equivalent Potential Method

机译：基于等效电位法的栅接法AlGaN / GaN HEMT的势能和电场分布解析模型

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摘要

A new physics-based modeling approach, Equivalent Potential Method (EPM), is first proposed in this paper to simplify the modeling progress of AlGaN/GaN HEMTs. The EPM indicates that charges in depletion region can be equivalent to the potential at passivation surface layer. Hereby, the depletion region can be seen as neutral, which therefore can be analyzed by using Laplace Equations other than the inherent Poisson Equations leading to much less modeling complexity. Especially, the corresponding iteration calculations can be significantly simplified with the elimination of various charge quantity. EPM provides an effective way to solve electric field and potential distributions with great concision and accuracy, especially important for AlGaN/GaN HEMTs with various charge layers to be concerned. By applying EPM, the analytical model shows good agreements with numerical results with acceptable discrepancies. The proposed simple analytical approach also offers effective guidance for field plates designing.
机译：为了简化AlGaN / GaN HEMT的建模过程，本文首次提出了一种新的基于物理的建模方法，即等效电位法（EPM）。 EPM表示耗尽区中的电荷可以等于钝化表面层的电势。因此，耗尽区可以看作是中性的，因此可以使用除固有泊松方程之外的拉普拉斯方程进行分析，从而减少了建模的复杂性。特别是，在消除各种电荷量的情况下，可以显着简化相应的迭代计算。 EPM提供了一种有效的方法来解决电场和电位分布问题，具有很高的简洁性和准确性，这对于要考虑各种电荷层的AlGaN / GaN HEMT尤其重要。通过应用EPM，分析模型显示出良好的一致性，数值结果具有可接受的差异。所提出的简单分析方法也为现场板的设计提供了有效的指导。

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