Elusive Graphene Transistor Gets a Little Closer

Mike Orcutt

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Elusive Graphene Transistor Gets a Little Closer

机译：难以捉摸的石墨烯晶体管越来越近

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Anew way of growing graphene could make it feasible for the remarkable material to become the basis of electronic devices that greatly outperform today's computers. Graphene, a single-atom-thick carbon material first discovered in 2004, would supercharge integrated circuits because electrons move much more quickly through it than through silicon. But even the best graphene transistors developed by researchers have been impractical for use in circuits because the material lacks a "band gap."

机译：一种新的石墨烯生长方式可以使这种非凡的材料成为大大超越当今计算机的电子设备的基础。石墨烯是一种单原子厚的碳材料，于2004年首次发现，它将为集成电路增压，因为电子在其中的移动比通过硅的移动快得多。但是，即使研究人员开发的最好的石墨烯晶体管在电路中使用也是不切实际的，因为这种材料缺乏“带隙”。

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《Technology review》 |2013年第6期|24-24|共1页
作者
Mike Orcutt;
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1. Realization of low contact resistance close to theoretical limit in graphene transistors [J] . Hua Zhong, Zhiyong Zhang, Bingyan Chen, 纳米研究：英文版 . 2015,第005期

机译：在石墨烯晶体管中实现接近理论极限的低接触电阻
2. Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance [J] . Kosuke Nagashio Journal of Materials Research . 2017,第1期

机译：石墨烯场效应晶体管的应用-从量子电容中提取的晶体管结构中石墨烯的能带结构
3. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [J] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone Scientific reports. . 2014,第1期

机译：作为后CMOS器件，基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
4. Why is the spin field effect transistor elusive? [C] . Pramanik, S., Bandyopadhyay, . 2004

机译：为什么自旋场效应晶体管难以捉摸？
5. Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes [D] . Sinha, Dhiraj P. 2014

机译：支持石墨烯界面的基本研究：石墨烯场效应晶体管（FET）中缺陷密度和理想石墨烯 - 硅肖丝狄克二极管
6. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [O] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone -1

机译：作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
7. Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene [O] . Hwang, Wan Sik, Tahy, Kristof, Li, Xuesong, 2012

机译：石墨烯纳米带晶体管在输运中的输运性质石墨烯纳米带晶体管在化学气相沉积中的性质生长的晶圆级石墨烯
8. New Route toward Systematic Control of Electronic Structures of Graphene and Fabrication of Graphene Field Effect Transistors. [R] . Pala, N. 2016

机译：石墨烯电子结构系统控制的新途径及石墨烯场效应晶体管的制备。

Elusive Graphene Transistor Gets a Little Closer

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